HIT intermediate-band solar cells with self-assembled colloidal quantum dots and metal nanoparticles
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Tipus de documentComunicació de congrés
Data publicació2015
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés restringit per política de l'editorial
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Abstract
The particular opto-electronic properties of chemically synthesized colloidal nanoparticles can be promising for functional materials, as those required for high efficient photovoltaic (PV) devices. In particular, appropriately-designed semiconductor colloids (quantum dots, QDs) can potentially allow sub-bandgap current generation in intermediate-band solar cells; while metal nanoparticles (MNPs) sustaining surface plasmons can provide both near and far-field light trapping to further boost the generated power. However, the incorporation of colloidal particles in inorganic PV materials is not trivial,
therefore their implementation has so far been restricted to
organic/polymeric based solar cells. In this work, PbS colloidal
QDs have been incorporated in the intrinsic a-Si:H layer of HIT
(substrate/a-Si:H hetero-junction) test structures. Both c-Si and
GaAs substrates have been used, and in some cases colloidal Au
NPs have also been included. The obtained devices are meant as
probes to verify the feasibility of incorporating foreign
nanoparticles in a cell structure and not as potentially efficient
solar cells. Despite the radical novelties incorporated, the devices
behaved similarly to the references, thus proving the
compatibility of the proposed materials and processes.
CitacióTobias, I., Mendes, M., Boronat, A., Lopez, E., garcia-linares, P., Artacho, I., Martí, A., Silvestre, S., Luque, A. HIT intermediate-band solar cells with self-assembled colloidal quantum dots and metal nanoparticles. A: IEEE Photovoltaic Specialists Conference. "2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC 2015): New Orleans, LA, USA: 14-19 June 2015". New Orleans: Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 1-6.
Dipòsit legalIEEE
ISBN978-1-4799-7944-8
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