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dc.contributor.authorDe Marcellis, A.
dc.contributor.authorReig, C
dc.contributor.authorCubells Beltrán, M. Dolores
dc.contributor.authorMadrenas Boadas, Jordi
dc.contributor.authorCardoso, F
dc.contributor.authorCardoso, S.
dc.contributor.authorFreitas, P.P
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2016-01-19T13:46:57Z
dc.date.issued2014
dc.identifier.citationDe Marcellis, A., Reig, C., Cubells, M., Madrenas, J., Cardoso, F., Cardoso, S., Freitas, P. Giant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing. A: IEEE Conference on Sensors. "IEEE Sensors 2014: proceedings: Valencia, Spain: November 2-5, 2014". València: Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 444-447.
dc.identifier.isbn978-1-4799-0161-6
dc.identifier.urihttp://hdl.handle.net/2117/81678
dc.description.abstractThis paper reports on the design and fabrication of microelectronic structures for non-invasive indirect electric current sensing at the IC level. A 0.35 ¿m CMOS ASIC has been specifically developed for this purpose. Then, a low temperature post-process, fully compatible with the CMOS technology, has been applied for depositing Giant Magnetoresistive (GMR) sensors. Preliminary experimental results for obtaining the sensitivity of the devices are presented. The detection limit is estimated to be about 5 ¿A.
dc.format.extent4 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors
dc.subject.lcshIntegrated circuits
dc.subject.lcshDetectors
dc.subject.otherGMR
dc.subject.otherElectric current sensor
dc.subject.otherIntegrated circuit
dc.subject.otherCMOS compatible
dc.subject.otherASIC1
dc.titleGiant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing
dc.typeConference report
dc.subject.lemacCircuits integrats
dc.subject.lemacDetectors
dc.contributor.groupUniversitat Politècnica de Catalunya. CETpD -Centre d'Estudis Tecnològics per a l'Atenció a la Dependència i la Vida Autònoma
dc.identifier.doi10.1109/ICSENS.2014.6985030
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6985030
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac17405282
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorDe Marcellis, A.; Reig, C.; Cubells, M.; Madrenas, J.; Cardoso, F.; Cardoso, S.; Freitas, P.
local.citation.contributorIEEE Conference on Sensors
local.citation.pubplaceValència
local.citation.publicationNameIEEE Sensors 2014: proceedings: Valencia, Spain: November 2-5, 2014
local.citation.startingPage444
local.citation.endingPage447


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