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Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers
dc.contributor.author | Radziunas, Mindaugas |
dc.contributor.author | Herrero Simon, Ramon |
dc.contributor.author | Botey Cumella, Muriel |
dc.contributor.author | Staliunas, Kestutis |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament de Física |
dc.date.accessioned | 2016-01-14T16:17:19Z |
dc.date.available | 2016-01-14T16:17:19Z |
dc.date.issued | 2015-05-01 |
dc.identifier.citation | Radziunas, M., Herrero, R., Botey, M., Staliunas, K. Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers. "Journal of the Optical Society of America B. Optical physics", 01 Maig 2015, vol. 32, núm. 5, p. 993-1000. |
dc.identifier.issn | 0740-3224 |
dc.identifier.uri | http://hdl.handle.net/2117/81487 |
dc.description | © 2015 [Optical Society of America]. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited. |
dc.description.abstract | We perform a detailed theoretical analysis of the far-field narrowing in broad-area edge-emitting semiconductor amplifiers that are electrically injected through contacts periodically modulated in both longitudinal and transverse directions. The beam propagation properties within the semiconductor amplifier are explored by a (1 + 2)-dimensional traveling wave model and its coupled-mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far-field component. |
dc.format.extent | 8 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Física |
dc.subject | Àrees temàtiques de la UPC::Ciències de la visió::Òptica física |
dc.subject.lcsh | Power amplifiers |
dc.subject.lcsh | Lasers |
dc.subject.other | spatiotemporal dynamics |
dc.subject.other | beam-propagation |
dc.subject.other | power-amplifiers |
dc.subject.other | area lasers |
dc.subject.other | feedback |
dc.subject.other | simulation |
dc.subject.other | NM |
dc.title | Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers |
dc.type | Article |
dc.subject.lemac | Amplificadors de potència |
dc.subject.lemac | Làsers |
dc.contributor.group | Universitat Politècnica de Catalunya. DONLL - Dinàmica no Lineal, Òptica no Lineal i Làsers |
dc.identifier.doi | 10.1364/JOSAB.32.000993 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | https://www.osapublishing.org/josab/abstract.cfm?uri=josab-32-5-993 |
dc.rights.access | Open Access |
local.identifier.drac | 15830546 |
dc.description.version | Postprint (author's final draft) |
dc.relation.projectid | info:eu-repo/grantAgreement/MICINN//FIS2011-29734-C02-01/ES/CONTROL DE LA DIFRACCION DE LA LUZ EN MEDIOS MODULADOS/ |
local.citation.author | Radziunas, M.; Herrero, R.; Botey, M.; Staliunas, K. |
local.citation.publicationName | Journal of the Optical Society of America B. Optical physics |
local.citation.volume | 32 |
local.citation.number | 5 |
local.citation.startingPage | 993 |
local.citation.endingPage | 1000 |
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