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dc.contributor.authorRadziunas, Mindaugas
dc.contributor.authorHerrero Simon, Ramon
dc.contributor.authorBotey Cumella, Muriel
dc.contributor.authorStaliunas, Kestutis
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Física
dc.date.accessioned2016-01-14T16:17:19Z
dc.date.available2016-01-14T16:17:19Z
dc.date.issued2015-05-01
dc.identifier.citationRadziunas, M., Herrero, R., Botey, M., Staliunas, K. Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers. "Journal of the Optical Society of America B. Optical physics", 01 Maig 2015, vol. 32, núm. 5, p. 993-1000.
dc.identifier.issn0740-3224
dc.identifier.urihttp://hdl.handle.net/2117/81487
dc.description© 2015 [Optical Society of America]. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
dc.description.abstractWe perform a detailed theoretical analysis of the far-field narrowing in broad-area edge-emitting semiconductor amplifiers that are electrically injected through contacts periodically modulated in both longitudinal and transverse directions. The beam propagation properties within the semiconductor amplifier are explored by a (1 + 2)-dimensional traveling wave model and its coupled-mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far-field component.
dc.format.extent8 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Física
dc.subjectÀrees temàtiques de la UPC::Ciències de la visió::Òptica física
dc.subject.lcshPower amplifiers
dc.subject.lcshLasers
dc.subject.otherspatiotemporal dynamics
dc.subject.otherbeam-propagation
dc.subject.otherpower-amplifiers
dc.subject.otherarea lasers
dc.subject.otherfeedback
dc.subject.othersimulation
dc.subject.otherNM
dc.titleFar-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers
dc.typeArticle
dc.subject.lemacAmplificadors de potència
dc.subject.lemacLàsers
dc.contributor.groupUniversitat Politècnica de Catalunya. DONLL - Dinàmica no Lineal, Òptica no Lineal i Làsers
dc.identifier.doi10.1364/JOSAB.32.000993
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://www.osapublishing.org/josab/abstract.cfm?uri=josab-32-5-993
dc.rights.accessOpen Access
local.identifier.drac15830546
dc.description.versionPostprint (author's final draft)
dc.relation.projectidinfo:eu-repo/grantAgreement/MICINN//FIS2011-29734-C02-01/ES/CONTROL DE LA DIFRACCION DE LA LUZ EN MEDIOS MODULADOS/
local.citation.authorRadziunas, M.; Herrero, R.; Botey, M.; Staliunas, K.
local.citation.publicationNameJournal of the Optical Society of America B. Optical physics
local.citation.volume32
local.citation.number5
local.citation.startingPage993
local.citation.endingPage1000


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