Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers
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We perform a detailed theoretical analysis of the far-field narrowing in broad-area edge-emitting semiconductor amplifiers that are electrically injected through contacts periodically modulated in both longitudinal and transverse directions. The beam propagation properties within the semiconductor amplifier are explored by a (1 + 2)-dimensional traveling wave model and its coupled-mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far-field component.
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CitationRadziunas, M., Herrero, R., Botey, M., Staliunas, K. Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers. "Journal of the Optical Society of America B. Optical physics", 01 Maig 2015, vol. 32, núm. 5, p. 993-1000.