Show simple item record

dc.contributorKoppens, Frank H. L.
dc.contributorLemmer, Uli (Karlsruhe Institute Of Technology)
dc.contributor.authorDavydovskaya, Diana
dc.contributor.otherUniversitat Politècnica de Catalunya. Institut de Ciències Fotòniques
dc.date.accessioned2015-12-07T14:35:02Z
dc.date.available2015-12-07T14:35:02Z
dc.date.issued2015-09-08
dc.identifier.urihttp://hdl.handle.net/2117/80270
dc.description.abstractGraphene is a relatively new material with unique properties that found application in the field of electronics and optoelectronics. A broadband absorption makes it especially interesting for photodetection applications. Middle-infrared domain of electromagnetic spectrum still lacks active media for photodetection that are cheap, do not contain toxic elements and do not require additional cooling. This work is focused on the fabrication of a graphene-based photodetector for middle-infrared domain and on the photoresponsivity mechanisms in this region where direct absorption by graphene does not play the dominant role. Several steps to improve the device quality are considered and the photocurrent measurements in the middle-infrared are performed and analysed. The substrate properties such as dielectric permittivity dispersion of the silicon oxide and the hyperbolic nature of hexagonal Boron Nitride are found to introduce essential contribution to the photocurrent enhancement mechanism.
dc.language.isoeng
dc.publisherUniversitat Politècnica de Catalunya
dc.rightsS'autoritza la difusió de l'obra mitjançant la llicència Creative Commons o similar 'Reconeixement-NoComercial- SenseObraDerivada'
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació
dc.subject.lcshOptoelectronics
dc.subject.otherGraphene p-n junction
dc.subject.otherMid-infrared
dc.subject.otherPhotocurrent
dc.titlePhotoconductivity in High-Quality Graphene
dc.title.alternativePhotocunductivity in High-Quality Graphene
dc.typeMaster thesis
dc.subject.lemacOptoelectrònica
dc.identifier.slugETSETB-230.114427
dc.rights.accessOpen Access
dc.date.updated2015-12-02T06:54:26Z
dc.audience.educationlevelMàster
dc.audience.mediatorEscola Tècnica Superior d'Enginyeria de Telecomunicació de Barcelona
dc.audience.degreeMÀSTER UNIVERSITARI ERASMUS MUNDUS EN ENGINYERIA FOTÒNICA, NANOFOTÒNICA I BIOFOTÒNICA (Pla 2010)


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record