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  • Influence of punch trough stop layer and well depths on the robustness of bulk FinFETs to heavy ions impact 

    Calomarde Palomino, Antonio; Manich Bou, Salvador; Rubio Sola, Jose Antonio; Gamiz, Francisco (Institute of Electrical and Electronics Engineers (IEEE), 2022-05-02)
    Article
    Open Access
    This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 ...

  • On-line remaining useful life estimation of power connectors focused on predictive maintenance 

    Riba Ruiz, Jordi-Roger; Gómez Pau, Álvaro; Martínez Reyes, Jimmy Arturo; Moreno Eguilaz, Juan Manuel (Multidisciplinary Digital Publishing Institute (MDPI), 2021-05-27)
    Article
    Open Access
    Connections are critical elements in power systems, exhibiting higher failure probability. Power connectors are considered secondary simple devices in power systems despite their key role, since a failure in one such element ...

  • RRAM random number generator based on train of pulses 

    Yang, Binbin; Arumi Delgado, Daniel; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Bargalló González, Mireia; Campabadal, Francesca; Fang, Liang (2021-07-30)
    Article
    Open Access
    In this paper, the modulation of the conductance levels of resistive random access memory (RRAM) devices is used for the generation of random numbers by applying a train of RESET pulses. The influence of the pulse amplitude ...

  • Serial RRAM cell for secure bit concealing 

    Yang, Binbin; Arumi Delgado, Daniel; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Bargalló González, Mireia; Campabadal, Francesca; Fang, Liang (2021-07-31)
    Article
    Open Access
    Non-volatile memory cells are exposed to adversary attacks since any active countermeasure is useless when the device is powered off. In this context, this work proposes the association of two serial RRAM devices as a basic ...

  • Enhanced serial RRAM cell for unpredictable bit generation 

    Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Gómez-Pau, Álvaro; Manich Bou, Salvador; Bargalló González, Mireia; Campabadal, Francesca (2021-05)
    Article
    Open Access
    In this letter, the serial configuration of two RRAMs is used as a basic cell to generate an unpredictable bit. The basis of the operation considers starting from the Low Resistive State (LRS) in both devices (initialization ...

  • Indirect and adaptive test of analogue circuits based on preselected steady-state response measures 

    Gómez Pau, Álvaro; Lupón Roses, Emilio; Balado Suárez, Luz María; Figueras, Joan (2020-08-01)
    Article
    Open Access
    Alternate testing techniques have been progressively adopted as a promising solution due to their effectiveness against classical specification-based test methods. This work presents a built-in test system, which adaptively ...

  • A forming-free ReRAM cell with low operating voltage 

    Yang, Binbin; Xu, Nuo; Li, Cheng; Huang, Chenglong; Ma, Desheng; Liu, Jiahao; Arumi Delgado, Daniel; Fang, Liang (2020-11-25)
    Article
    Open Access
    The unwanted electro-forming process is unavoidable for the practical application of most resistive random access memory (ReRAM) devices, which is always being one of the obstacles for the massive commercialization of this ...

  • Sensor comparison for corona discharge detection under low pressure conditions 

    Riba Ruiz, Jordi-Roger; Gómez Pau, Álvaro; Moreno Eguilaz, Juan Manuel (2020-06-01)
    Article
    Open Access
    Low pressure environments, situate insulation systems in a challenging position since partial discharges (PDs), corona and arc tracking are more likely to develop. Therefore, specific solutions are required to detect such ...

  • Uprating of transmission lines by means of HTLS conductors for a sustainable growth: challenges, opportunities, and research needs 

    Riba Ruiz, Jordi-Roger; Bogarra Rodríguez, Santiago; Gómez Pau, Álvaro; Moreno Eguilaz, Juan Manuel (2020-12-01)
    Article
    Open Access
    This paper provides a comprehensive and critical review and evaluation of the technological state-of-the-art of high-temperature low-sag (HTLS) conductors by analyzing research articles, theses, reports, white papers and ...

  • Arc tracking control in insulation systems for aeronautic applications: challenges, opportunities, and research needs 

    Riba Ruiz, Jordi-Roger; Gómez Pau, Álvaro; Moreno Eguilaz, Juan Manuel; Bogarra Rodríguez, Santiago (Multidisciplinary Digital Publishing Institute (MDPI), 2020-03-16)
    Article
    Open Access
    Next generation aircrafts will use more electrical power to reduce weight, fuel consumption, system complexity and greenhouse gas emissions. However, new failure modes and challenges arise related to the required voltage ...

  • Impact of laser attacks on the switching behavior of RRAM devices 

    Arumi Delgado, Daniel; Manich Bou, Salvador; Gómez Pau, Álvaro; Rodríguez Montañés, Rosa; Montilla, Víctor; Hernández, David; Bargalló González, Mireia; Campabadal, Francesca (2020-01-20)
    Article
    Open Access
    The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative ...

  • Experimental study of visual corona under aeronautic pressure conditions using low-cost imaging sensors 

    Riba Ruiz, Jordi-Roger; Gómez Pau, Álvaro; Moreno Eguilaz, Juan Manuel (Multidisciplinary Digital Publishing Institute (MDPI), 2020-01-11)
    Article
    Open Access
    Visual corona tests have been broadly applied for identifying the critical corona points of diverse high-voltage devices, although other approaches based on partial discharge or radio interference voltage measurements are ...

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