Ara es mostren els items 1-12 de 100

    • Slow-envelope shaping function FPGA implementation for 5G NR envelope tracking PA 

      Li, Wantao; Bartzoudis, Nikolaos; Rubio Fernández, José; López Bueno, David; Montoro López, Gabriel; Gilabert Pinal, Pere Lluís (Institute of Electrical and Electronics Engineers (IEEE), 2022)
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      This paper focuses on the FPGA implementation of a slew-rate reduction (SR) shaping function for envelope tracking (ET) power amplifiers (PAs). The SR envelope has been proved effective to trade-off power efficiency and ...
    • Fast modeling of lateral modes in BAW resonators with arbitrary in-plane geometry 

      Udaondo Guerrero, Carlos; Collado Gómez, Juan Carlos; Mateu Llevadot, Jordi (Institute of Electrical and Electronics Engineers (IEEE), 2022)
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      The Transmission Line Matrix (TLM) method is used to model and predict lateral spurious resonances in a BAW resonator. The dispersive characteristics of the main propagating mode, which are defined by the stack of materials, ...
    • Application of the input-output equivalent sources method for the simulation of nonlinearities in TC-SAW resonators and filters 

      González Rodríguez, Marta; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; González Arbesú, José María; Huebner, Sebatian; Aigner, Robert (Institute of Electrical and Electronics Engineers (IEEE), 2022)
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      A good understanding of the nonlinearity mechanism in SAW devices is a crucial aspect in the filter stage. Nonlinear intermodulation distortion (IMD) may lead to spurious signals falling into the receiver band and limiting ...
    • Updated BVD modeling of AlN-based solidly mounted resonators working at cryogenic and high temperatures: from -160°C up to 130°C 

      Lugo Hernández, Eduardo; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; Carmona Cejas, José Manuel; Mirea, Teona; Olivares Roza, Jimena (Institute of Electrical and Electronics Engineers (IEEE), 2022)
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      In this work we theoretically and experimentally assess the behavior of AlN-based Solidly Mounted Resonators (SMR) at cryogenic and high temperatures. This study can be useful for precise behavior prediction of SMR sensors ...
    • RF leakage compensation in wideband envelope tracking power amplifiers for mobile terminals 

      Li, Wantao; Montoro López, Gabriel; Gilabert Pinal, Pere Lluís (2022)
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      This paper presents a new linearization method to compensate for the unwanted RF leakage that appears at the ouput of envelope tracking modulators (ETMs) when operating envelope tracking (ET) power amplifiers (PAs) with ...
    • Method to measure reflection coefficient under CW high-power signals in SAW resonators 

      González Rodríguez, Marta; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; González Arbesú, José María; Huebner, Sebatian; Aigner, Robert (Institute of Electrical and Electronics Engineers (IEEE), 2021)
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      Improving power handling and lifetime are key assets to ensure device performance and reliability. SAW resonators composed by very thin cross-section inter-digital transducer (IDT) structures make difficult to control the ...
    • Out of band improved performance into a measured 5G N77 band transversal filter 

      Udaondo Guerrero, Carlos; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; Perea Robles, Rafael; Yusud, Yazid; Giménez Bonastre, Alfred Raul; Aigner, Robert (Institute of Electrical and Electronics Engineers (IEEE), 2021)
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      Transversal networks for electroacoustic filters had been proposed and manufactured recently. One of the main problems that arose in the first prototype were the spurious modes due to the mirror stack of the Solidly Mounted ...
    • Synthesis procedure for ladder acoustic wave filters starting in series resonator 

      Perea Robles, Rafael; Mateu Mateu, Jordi; Collado Gómez, Juan Carlos (Institute of Electrical and Electronics Engineers (IEEE), 2021)
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      This work provides a new procedure to synthesize acoustic wave ladder filters starting with series resonators. The novelty of this method relies in a new synthesis methodology to extract a series inductance in filter ...
    • Transversal filters based on stacked crystal filters with spurious mode suppression 

      Yusuf, Yazid; Gimenez, Alfred; AlJoumayly, Mudar; Mateu Mateu, Jordi; Collado Gómez, Juan Carlos (Institute of Electrical and Electronics Engineers (IEEE), 2021)
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      The transversal filter topology consists of resonators which require both positive and negative coupling to the input/output which typically necessitates the use of a BALUN. In this paper, transversal filters based on ...
    • FPGA implementation of memory-based digital predistorters with high-level synthesis 

      Li, Wantao; Guillena Berenguer, Estefanía; Montoro López, Gabriel; Gilabert Pinal, Pere Lluís (Institute of Electrical and Electronics Engineers (IEEE), 2021)
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      This paper presents a scalable look-up table (LUT) architecture for implementing digital predistortion (DPD) linearizers in a field programmable gate array (FPGA) by using the high-level synthesis (HLS) software. This ...
    • High temperatures BVD model for AlN-based solidly mounted resonators 

      Lugo Hernández, Eduardo; Mirea, Teona; Carmona Cejas, Jose Manuel; Clement Lorenzo, Marta; Olivares Roza, Jimena; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi (Institute of Electrical and Electronics Engineers (IEEE), 2021)
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      In this paper we present an updated version of the well-known one dimensional model for Solidly Mounted Resonators (SMRs) based on Aluminum Nitride (AIN) for harsh environments at 2.4 GHz in sensing applications. Our model ...
    • Modified Mason’s and BVD models for analysis of spurious modes due to ohmic losses in BAW resonators 

      Lugo Hernández, Eduardo; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; Mirea, Teona; Carmona Cejas, Jose Manuel; Clement Lorenzo, Marta; Olivares Roza, Jimena (Institute of Electrical and Electronics Engineers (IEEE), 2021)
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      We study the presence of an additional peak appearing at the series resonance of SMRs due to the resistance of thin metallic electrodes, especially relevant in devices with large area. To properly account for this effect, ...