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dc.contributor.authorAragonès Cervera, Xavier
dc.contributor.authorMateo Peña, Diego
dc.contributor.authorGonzález Jiménez, José Luis
dc.contributor.authorVidal López, Eva María
dc.contributor.authorGómez Salinas, Didac
dc.contributor.authorMartineau, B
dc.contributor.authorAltet Sanahujes, Josep
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2015-11-13T14:55:10Z
dc.date.available2015-11-13T14:55:10Z
dc.date.issued2015-11
dc.identifier.citationAragones, X., Mateo, D., González, J.L., Vidal, E., Gómez, D., Martineau, B., Altet, J. DC temperature measurements to characterize the central frequency and 3 dB bandwidth in mmW power amplifiers. "IEEE microwave and wireless components letters", Novembre 2015, vol. 25, núm. 11, p. 745-747.
dc.identifier.issn1531-1309
dc.identifier.urihttp://hdl.handle.net/2117/79249
dc.description.abstractThis letter shows how a temperature sensor and a simple DC voltage multimeter can be used as instruments to determine the central frequency and 3 dB bandwidth of a 60 GHz linear power amplifier (PA). Compared to previous works, the DC temperature monitoring now proposed requires a much simpler and convenient measurement set-up. In this example, the temperature sensor is embedded in the same silicon die as the PA. Being placed in empty layout spaces next to it, it is proposed as a built-in test circuit.
dc.format.extent3 p.
dc.language.isoeng
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura
dc.subject.lcshIntegrated circuits
dc.subject.lcshTemperature measurements
dc.subject.otherBuilt-in test
dc.subject.otherCMOS millimeter wave integrated circuits
dc.subject.otherDesign for testability
dc.subject.otherTemperature measurement
dc.titleDC temperature measurements to characterize the central frequency and 3 dB bandwidth in mmW power amplifiers
dc.typeArticle
dc.subject.lemacCircuits integrats
dc.subject.lemacTermometria
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.groupUniversitat Politècnica de Catalunya. EPIC - Energy Processing and Integrated Circuits
dc.identifier.doi10.1109/LMWC.2015.2479848
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7293238&filter%3DAND%28p_IS_Number%3A7317830%29
dc.rights.accessOpen Access
local.identifier.drac17230898
dc.description.versionPostprint (author's final draft)
dc.relation.projectidinfo:eu-repo/grantAgreement/MINECO//TEC2013-45638-C3-2-R/ES/APROXIMACION MULTINIVEL AL DISEÑO ORIENTADO A LA FIABILIDAD DE CIRCUITOS INTEGRADOS ANALOGICOS Y DIGITALES/
local.citation.authorAragones, X.; Mateo, D.; González, J.L.; Vidal, E.; Gómez, D.; Martineau, B.; Altet, J.
local.citation.publicationNameIEEE microwave and wireless components letters
local.citation.volume25
local.citation.number11
local.citation.startingPage745
local.citation.endingPage747


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