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High efficiency black silicon Interdigitated Back Contacted solar cells on p- and n-type c-Si substrates
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | Calle, Eric |
dc.contributor.author | von Gastrow, Guillaume |
dc.contributor.author | Repo, Päivikki |
dc.contributor.author | Carrió, David |
dc.contributor.author | Savin, Hele |
dc.contributor.author | Alcubilla, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2015-10-29T15:02:04Z |
dc.date.available | 2016-10-31T01:30:16Z |
dc.date.issued | 2015 |
dc.identifier.citation | Ortega, P., Calle, E., von Gastrow, G., Repo, P., Carrió, D., Savin, H., Alcubilla, R. High efficiency black silicon Interdigitated Back Contacted solar cells on p- and n-type c-Si substrates. "Progress in photovoltaics", 2015, vol. 23, núm. 11, p. 1448-1457. |
dc.identifier.issn | 1062-7995 |
dc.identifier.uri | http://hdl.handle.net/2117/78512 |
dc.description.abstract | This work demonstrates the high potential of Al2O3 passivated black silicon in high-efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very low reflectance values, below 0.7% in the 300–1000 nm wavelength range, together with striking surface recombination velocities values of 17 and 5 cm/s on p-type and n-type crystalline silicon substrates, respectively, are reached. The simultaneous fulfillment of requirements, low reflectance and low surface recombination, paves the way for the fabrication of high-efficiency IBC Si solar cells using black silicon at their front surface. Outstanding photovoltaic efficiencies over 22% have been achieved both in p-type and n-type 9-cm2 cells. 3D simulations suggest that efficiencies of up to 24% can be obtained in the future with minor modifications in the baseline fabrication process. |
dc.format.extent | 10 p. |
dc.language.iso | eng |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject.lcsh | Photovoltaic power generation |
dc.subject.lcsh | Porous silicon |
dc.subject.other | Black silicon |
dc.subject.other | Crystalline silicon |
dc.subject.other | IBC solar cell |
dc.subject.other | High-efficiency |
dc.subject.other | ALD Al2O3 |
dc.subject.other | Passivation |
dc.title | High efficiency black silicon Interdigitated Back Contacted solar cells on p- and n-type c-Si substrates |
dc.type | Article |
dc.subject.lemac | Energia solar fotovoltaica |
dc.subject.lemac | Silici porós |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1002/pip.2664 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://onlinelibrary.wiley.com/doi/10.1002/pip.2664/full |
dc.rights.access | Open Access |
local.identifier.drac | 16942963 |
dc.description.version | Postprint (published version) |
local.citation.author | Ortega, P.; Calle, E.; von Gastrow, G.; Repo, P.; Carrió, D.; Savin, H.; Alcubilla, R. |
local.citation.publicationName | Progress in photovoltaics |
local.citation.volume | 23 |
local.citation.number | 11 |
local.citation.startingPage | 1448 |
local.citation.endingPage | 1457 |
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