Show simple item record

dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorCalle, Eric
dc.contributor.authorvon Gastrow, Guillaume
dc.contributor.authorRepo, Päivikki
dc.contributor.authorCarrió, David
dc.contributor.authorSavin, Hele
dc.contributor.authorAlcubilla, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2015-10-29T15:02:04Z
dc.date.available2016-10-31T01:30:16Z
dc.date.issued2015
dc.identifier.citationOrtega, P., Calle, E., von Gastrow, G., Repo, P., Carrió, D., Savin, H., Alcubilla, R. High efficiency black silicon Interdigitated Back Contacted solar cells on p- and n-type c-Si substrates. "Progress in photovoltaics", 2015, vol. 23, núm. 11, p. 1448-1457.
dc.identifier.issn1062-7995
dc.identifier.urihttp://hdl.handle.net/2117/78512
dc.description.abstractThis work demonstrates the high potential of Al2O3 passivated black silicon in high-efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very low reflectance values, below 0.7% in the 300–1000 nm wavelength range, together with striking surface recombination velocities values of 17 and 5 cm/s on p-type and n-type crystalline silicon substrates, respectively, are reached. The simultaneous fulfillment of requirements, low reflectance and low surface recombination, paves the way for the fabrication of high-efficiency IBC Si solar cells using black silicon at their front surface. Outstanding photovoltaic efficiencies over 22% have been achieved both in p-type and n-type 9-cm2 cells. 3D simulations suggest that efficiencies of up to 24% can be obtained in the future with minor modifications in the baseline fabrication process.
dc.format.extent10 p.
dc.language.isoeng
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject.lcshPhotovoltaic power generation
dc.subject.lcshPorous silicon
dc.subject.otherBlack silicon
dc.subject.otherCrystalline silicon
dc.subject.otherIBC solar cell
dc.subject.otherHigh-efficiency
dc.subject.otherALD Al2O3
dc.subject.otherPassivation
dc.titleHigh efficiency black silicon Interdigitated Back Contacted solar cells on p- and n-type c-Si substrates
dc.typeArticle
dc.subject.lemacEnergia solar fotovoltaica
dc.subject.lemacSilici porós
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1002/pip.2664
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://onlinelibrary.wiley.com/doi/10.1002/pip.2664/full
dc.rights.accessOpen Access
local.identifier.drac16942963
dc.description.versionPostprint (published version)
local.citation.authorOrtega, P.; Calle, E.; von Gastrow, G.; Repo, P.; Carrió, D.; Savin, H.; Alcubilla, R.
local.citation.publicationNameProgress in photovoltaics
local.citation.volume23
local.citation.number11
local.citation.startingPage1448
local.citation.endingPage1457


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record