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Localization and electrical characterization of interconnect open defects

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Rodríguez Montañés, RosaMés informacióMés informacióMés informació
Arumi Delgado, DanielMés informacióMés informacióMés informació
Figueras Pàmies, JoanMés informació
Beverloo, Willem
Vries, Dirk K. de
Eichenberger, Stefan
Volf, Paul A. J.
Document typeArticle
Defense date2010-02
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
Abstract
A technique for extracting the electrical and topological parameters of open defects in process monitor lines is presented. The procedure is based on frequency-domain measurements performed at both end points of the line. The location as well as the resistive value of the open defect are derived from attenuation and phase shift measurements. The characteristic defect-free impedance of the line and its propagation constant are considered to be unknowns, and their values are also derived from the above measurements. In this way, the impact of process parameter variations on the proposed model is diminished. The experimental setup required to perform the characterization measurements and a simple graphical procedure to determine the defect and line parameters are presented. Experimental results show a good agreement between the predicted location of the open and its real location, found by optical beam induced resistance change inspection. Errors smaller than 2% of the total length of the line have been observed in the experiments.
CitationRodríguez, R. [et al.]. Localization and electrical characterization of interconnect open defects. "IEEE transactions on semiconductor manufacturing", Febrer 2010, vol. 23, núm. 1, p. 65-76. 
URIhttp://hdl.handle.net/2117/7803
ISSN0894-6507
Publisher versionhttp://sauwok.fecyt.es/apps/InboundService.do?product=CCC&action=retrieve&SrcApp=EndNoteWeb&UT=000274212900008&SID=P2LEGFKnEeCLg1ENIBo&SrcAuth=ISIResearchSoft&mode=FullRecord&customersID=ISIResearchSoft&DestFail=http://access.isiproducts.com/custom_images/wok_failed_auth.html
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  • Departament de Disseny i Programació de Sistemes Electrònics (fins octubre 2015) - Articles de revista [24]
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