Diagnosis of full open defects in interconnect lines with fan-out

Abstract

The development of accurate diagnosis methodologies is important to solve process problems and achieve fast yield improvement. As open defects are common in CMOS technologies, accurate diagnosis of open defects becomes a key factor. Widely used interconnect full open diagnosis procedures are based on the assumption that neighbouring lines determine the voltage of the defective line. However, this assumption decreases the diagnosis efficiency for opens in interconnect lines with fan-out, when the influence of transistor capacitances becomes important. This work presents a diagnosis methodology for interconnect full open defects where the impact of transistor parasitic capacitances is included. The methodology is able to properly diagnose interconnect opens with fan-out even in the presence of Byzantine behaviour. Diagnosis results for real defective devices from different technology nodes are presented.