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Large-Area Plasmonic-Crystal−Hot-Electron-Based Photodetectors

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hdl:2117/76506

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García de Arquer, Francisco Pelayo
Mihi, Agustín
Konstantatos, Gerasimos
Document typeArticle
Defense date2015-06-11
PublisherACS
Rights accessOpen Access
Attribution-NonCommercial-NoDerivs 3.0 Spain
Except where otherwise noted, content on this work is licensed under a Creative Commons license : Attribution-NonCommercial-NoDerivs 3.0 Spain
Abstract
In view of their exciting optoelectronic light− matter interaction properties, plasmonic−hot-electron devices have attracted significant attention during the last few years as a novel route for photodetection and light-energy harvesting. Herein we report the use of quasi-3D large-area plasmonic crystals (PC) for hot-electron photodetection, with a tunable response across the visible and near-infrared. The strong interplay between the different PC modes gives access to intense electric fields and hot-carrier generation confined to the metal− semiconductor interface, maximizing injection efficiencies with responsivities up to 70 mA/W. Our approach, compatible with large-scale manufacturing, paves the way for the practical implementation of plasmonic−hot-electron optoelectronic devices.
CitationGarcía de Arquer, F. Pelayo; Mihi, Agustín; Konstantatos, Gerasimos. Large-Area Plasmonic-Crystal−Hot-Electron-Based Photodetectors. "ACS Photonics", 11 Juny 2015, núm. 7, p. 950-957. 
URIhttp://hdl.handle.net/2117/76506
ISSN2330-4022
Publisher versionhttp://pubs.acs.org/doi/abs/10.1021/acsphotonics.5b00149
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