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dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.authorBeltrán, A.
dc.contributor.authorO'Callaghan Castellà, Juan Manuel
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2007-04-04T11:21:08Z
dc.date.available2007-04-04T11:21:08Z
dc.date.created1998-02-05
dc.date.issued1998-02-05
dc.identifier.citationLazaro, A.; Pradell, L.; Beltran, A.; O'Callaghan, J.M. Direct extraction of all four transistor noise parameters from 50 Ω noise figure measurements. Electronics Letters, 1998, vol.34, núm.3, p.289-291. ISSN:0013-5194
dc.identifier.issn0013-5194
dc.identifier.urihttp://hdl.handle.net/2117/741
dc.description.abstractA new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C11INT, C22INT, Re(C12INT), Im(C12INT)) by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources.
dc.format.extent289-291
dc.language.isoeng
dc.publisherIEE
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subject.lcshMicrowave transistors Noise
dc.subject.lcshHigh-electron-mobility transistors
dc.subject.otherhigh electron mobility transistors
dc.subject.othermicrowave transistors
dc.subject.othersemiconductor device noise
dc.subject.othersemiconductor device models
dc.subject.othermatrix algebra
dc.subject.otherequivalent circuits
dc.titleDirect extraction of all four transistor noise parameters from 50 noise figure measurements
dc.typeArticle
dc.subject.lemacTransistors de microones
dc.subject.lemacSoroll -- Mesurament
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access


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