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Direct extraction of all four transistor noise parameters from 50 noise figure measurements
| dc.contributor.author | Lázaro Guillén, Antoni |
| dc.contributor.author | Pradell i Cara, Lluís |
| dc.contributor.author | Beltrán, A. |
| dc.contributor.author | O'Callaghan Castellà, Juan Manuel |
| dc.contributor.other | Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions |
| dc.date.accessioned | 2007-04-04T11:21:08Z |
| dc.date.available | 2007-04-04T11:21:08Z |
| dc.date.created | 1998-02-05 |
| dc.date.issued | 1998-02-05 |
| dc.identifier.citation | Lazaro, A.; Pradell, L.; Beltran, A.; O'Callaghan, J.M. Direct extraction of all four transistor noise parameters from 50 Ω noise figure measurements. Electronics Letters, 1998, vol.34, núm.3, p.289-291. ISSN:0013-5194 |
| dc.identifier.issn | 0013-5194 |
| dc.identifier.uri | http://hdl.handle.net/2117/741 |
| dc.description.abstract | A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C11INT, C22INT, Re(C12INT), Im(C12INT)) by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. |
| dc.format.extent | 289-291 |
| dc.language.iso | eng |
| dc.publisher | IEE |
| dc.subject | Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques |
| dc.subject.lcsh | Microwave transistors Noise |
| dc.subject.lcsh | High-electron-mobility transistors |
| dc.subject.other | high electron mobility transistors |
| dc.subject.other | microwave transistors |
| dc.subject.other | semiconductor device noise |
| dc.subject.other | semiconductor device models |
| dc.subject.other | matrix algebra |
| dc.subject.other | equivalent circuits |
| dc.title | Direct extraction of all four transistor noise parameters from 50 noise figure measurements |
| dc.type | Article |
| dc.subject.lemac | Transistors de microones |
| dc.subject.lemac | Soroll -- Mesurament |
| dc.contributor.group | Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones |
| dc.description.peerreviewed | Peer Reviewed |
| dc.rights.access | Open Access |
| local.personalitzacitacio | true |
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