Direct extraction of all four transistor noise parameters from 50 noise figure measurements

Lázaro Guillén, Antoni; Pradell i Cara, Lluís; Beltrán, A.; O'Callaghan Castellà, Juan Manuel

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Lázaro Guillén, Antoni

Pradell i Cara, Lluís

Beltrán, A.

O'Callaghan Castellà, Juan Manuel

Document typeArticle

Defense date1998-02-05

PublisherIEE

Rights accessOpen Access

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder

Abstract

A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C11INT, C22INT, Re(C12INT), Im(C12INT)) by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources.

CitationLazaro, A.; Pradell, L.; Beltran, A.; O'Callaghan, J.M. Direct extraction of all four transistor noise parameters from 50 Ω noise figure measurements. Electronics Letters, 1998, vol.34, núm.3, p.289-291. ISSN:0013-5194

URIhttp://hdl.handle.net/2117/741

ISSN0013-5194

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