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dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.authorO'Callaghan Castellà, Juan Manuel
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2007-03-09T09:33:48Z
dc.date.available2007-03-09T09:33:48Z
dc.date.created1999
dc.date.issued1999
dc.identifier.citationLazaro, A.; Pradell, L.; O'Callaghan, J.M. FET noise-parameter determination using a novel technique based on 50-Ω noise-figure measurements. IEEE Transactions on microwave theory and techniques, 1999, vol.47, issue 3, p. 315-324
dc.identifier.issn0018-9480
dc.identifier.urihttp://hdl.handle.net/2117/671
dc.description.abstractA novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [C11INT, C22INT, Re(C12 INT), Im(C12INT)] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tuner-based methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain-current and gate-length is obtained.
dc.format.extent315-324
dc.language.isoeng
dc.publisherIEEE
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subject.lcshMicrowave measurements
dc.subject.othercalibration
dc.subject.otherelectric noise measurement
dc.subject.otherequivalent circuits
dc.subject.othermicrowave field effect transistors
dc.subject.othermicrowave measurement
dc.subject.othersemiconductor device measurement
dc.subject.othersemiconductor device models
dc.subject.othersemiconductor device noise
dc.titleFet noise-parameter determination using a novel technique based on 50 noise measurements
dc.typeArticle
dc.subject.lemacMicroones -- Dispositius
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
local.personalitzacitaciotrue


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