Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs
Document typeConference lecture
PublisherIEEE Press. Institute of Electrical and Electronics Engineers
Rights accessOpen Access
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Some sputtering processes of GaAs and Ti onto glass, c-Si and c-GaAs substrates have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents first results concerning the optical and structural properties of the different deposited thin films.
CitationSilvestre, S. [et al.]. Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs. A: 7th Spanish Conference on Electronics Devices. "7th Spanish Conference on Electronic Devices". Santiago de Compostela: IEEE Press. Institute of Electrical and Electronics Engineers, 2009, p. 5-7.