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Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs

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Silvestre Bergés, SantiagoMés informacióMés informacióMés informació
Puigdollers i González, JoaquimMés informacióMés informacióMés informació
Boronat, A.
Castañer Muñoz, Luis MaríaMés informacióMés informació
Document typeConference lecture
Defense date2009-02-11
PublisherIEEE Press. Institute of Electrical and Electronics Engineers
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
Abstract
Some sputtering processes of GaAs and Ti onto glass, c-Si and c-GaAs substrates have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents first results concerning the optical and structural properties of the different deposited thin films.
CitationSilvestre, S. [et al.]. Analysis of GaAs-Ti thin films deposited by sputtering onto c-Si and GaAs. A: 7th Spanish Conference on Electronics Devices. "7th Spanish Conference on Electronic Devices". Santiago de Compostela: IEEE Press. Institute of Electrical and Electronics Engineers, 2009, p. 5-7. 
URIhttp://hdl.handle.net/2117/6639
DLIEEE
ISBN978-1-4244-2839-7
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  • MNT - Grup de Recerca en Micro i Nanotecnologies - Ponències/Comunicacions de congressos [141]
  • Departament d'Enginyeria Electrònica - Ponències/Comunicacions de congressos [1.643]
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