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A Modified Charge Pumping Method for Measuring Interface States Up to the Ghz Range
dc.contributor.author | Fernández García, Raúl |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2010-02-11T10:58:36Z |
dc.date.available | 2010-02-11T10:58:36Z |
dc.date.created | 2009-06-18 |
dc.date.issued | 2009-06-18 |
dc.identifier.citation | Fernandez, R. A Modified Charge Pumping Method for Measuring Interface States Up to the Ghz Range. "Journal of electronic testing. Theory and applications", 18 Juny 2009, vol. 25, núm. 4, p. 279-283. |
dc.identifier.issn | 0923-8174 |
dc.identifier.uri | http://hdl.handle.net/2117/6340 |
dc.description | The original publication is available at springerlink.com |
dc.description.abstract | In this paper we present a modified on-chip charge pumping method for measuring the interface states in ultra-thin gate oxide complementary metal-oxide-semiconductor (CMOS) technology. The proposed method, which characterizes oxide interface states by applying pulse frequencies up to the GHz range, is used to evaluate the evolution of interface states due to dynamic negative bias temperature instability stress on the p-channel field-effect transistor (pFET). The results show that charge pumping increases linearly at frequencies up to the GHz range and that the time dependence of interface states due to AC negative bias temperature instability (NBTI) stress increases with a power law distribution. In addition, we demonstrate experimentally that the VTH shift due to AC NBTI stress depends on interface states and oxide traps. |
dc.format.extent | 5 p. |
dc.language.iso | eng |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència |
dc.subject.lcsh | Electromagnetic interference |
dc.subject.lcsh | Switching power supplies |
dc.title | A Modified Charge Pumping Method for Measuring Interface States Up to the Ghz Range |
dc.type | Article |
dc.subject.lemac | Interferència electromàgnetica |
dc.subject.lemac | Fonts d'alimentació |
dc.contributor.group | Universitat Politècnica de Catalunya. (TIEG) - Terrassa Industrial Electronics Group |
dc.identifier.doi | 10.1007/s10836-009-5104-8 |
dc.description.peerreviewed | Peer Reviewed |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 1176752 |
dc.description.version | Postprint (author’s final draft) |
local.citation.author | Fernandez, R. |
local.citation.publicationName | Journal of electronic testing. Theory and applications |
local.citation.volume | 25 |
local.citation.number | 4 |
local.citation.startingPage | 279 |
local.citation.endingPage | 283 |
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