Now showing items 13-24 of 128

    • Memristive cellular automata for modeling of epileptic brain activity 

      Karamani, Rafallia; Fyrigos, Iosif; Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio (2018)
      Conference report
      Open Access
      Cellular Automata (CA) is a nature-inspired and widespread computational model which is based on the collective and emergent parallel computing capability of units (cells) locally interconnected in an abstract brain-like ...
    • Coupled physarum-inspired memristor oscillators for neuron-like operations 

      Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Adamatzky, Andrew; Rubio Sola, Jose Antonio (2018)
      Conference report
      Open Access
      Unconventional computing has been studied intensively, even after the appearance of CMOS technology. Currently, it has returned to the spotlight because CMOS is about to reach its physical limits, given that the constant ...
    • Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level 

      Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference lecture
      Restricted access - publisher's policy
      This paper explores the feasibility, in terms of performance and reliability, of gain-cell embedded DRAM (eDRAM) to be operative at sub-threshold range, when they are implemented with 10 nm FinFET devices. The use of ...
    • An on-line test strategy and analysis for a 1T1R crossbar memory 

      Escudero, Manel; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Vourkas, Ioannis (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Open Access
      Memristors are emerging devices known by their nonvolability, compatibility with CMOS processes and high density in circuits density in circuits mostly owing to the crossbar nanoarchitecture. One of their most notable ...
    • Reliability issues in RRAM ternary memories affected by variability and aging mechanisms 

      Rubio Sola, Jose Antonio; Escudero, Manuel; Pouyan, Peyman (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Open Access
      Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and ...
    • Análisis del retardo en enlaces con protocolos ARQ y control de flujo: aplicación a una red estrella 

      Rubio Sola, Jose Antonio; Figueras Pàmies, Joan (Marcombo, 1983)
      Conference report
      Open Access
      El objetivo de este trabajo se enmarca en el desarrollo de herramientas de cuantificación de los tiempos de retardo en redes de computadores. El análisis se ha centrado en la evaluación del tiempo medio de retardo en el ...
    • Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations 

      Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Restricted access - publisher's policy
      This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation ...
    • Exploring the voltage divider approach for accurate memristor state tuning 

      Vourkas, Ioannis; Gomez, Jorge; Abusleme, Angel; Vasileiadis, Nikolaos; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Restricted access - publisher's policy
      The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multilevel programming. In this direction, we explore the voltage ...
    • Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells 

      Martinez, Javier; Rodriguez, Rosa; Nafria, Montse; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Conference report
      Restricted access - publisher's policy
      Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is ...
    • Via-configurable transistors array: a regular design technique to improve ICs yield 

      Pons, Marc; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Abella Ferrer, Jaume; Vera Rivera, Francisco Javier; González Colás, Antonio María (Institute of Electrical and Electronics Engineers (IEEE), 2007)
      Conference report
      Open Access
      Process variations are a major bottleneck for digital CMOS integrated circuits manufacturability and yield. That is why regular techniques with different degrees of regularity are emerging as possible solutions. Our ...
    • Heterogeneous memristive crossbar for in-memory computing 

      Papandroulidakis, Georgios; Vourkas, Ioanis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Conference report
      Open Access
      It's been quite a while since scientists are seeking for the ancestor of von Neumann computing architecture. Among the most promising candidates, memristor demonstrates advantageous characteristics, which open new pathways ...
    • Insights to memristive memory cell from a reliability perspective 

      Pouyan, Peyman; Amat Bertran, Esteve; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2015)
      Conference report
      Open Access
      The scaling roadmap of devices under a more than Moore scenario is resulting in the emergence of new types of devices. Among them, memristors seem to be promising candidates to be suitable for various areas of application ...