Ponències/Comunicacions de congressos
Enviaments recents
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On the variability-aware design of memristor-based logic circuits
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés obertEver since the advent of the first TiO 2 -based memristor and the respective linear model published by Hewlett-Packard Labs, several behavioral models of memristors have been published. Such models capture the fundamental ... -
Variability-tolerant memristor-based ratioed logic in crossbar array
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés obertThe advent of the first TiO2-based memristor in 2008 revived the scientific interest both from academia and industry for this de- vice technology, with several emerging applications including that of logic circuits. Several ... -
Multi-valued logic circuits on graphene quantum point contact devices
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés obertGraphene quantum point contacts (G-QPC) combine switching operations with quantized conductance, which can be modulated by top and back gates. Here we use the conductance quantization to design and simulate multi-valued ... -
Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés restringit per política de l'editorialElectronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ... -
Resistive switching behavior seen from the energy point of view
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés obertThe technology of Resistive Switching (RS) devices (memristors) is continuously maturing on its way towards viable commercial establishment. So far, the change of resistance has been identified as a function of the applied ... -
A comprehensive method to taxonomize mechanical energy harvesting technologies
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés restringit per política de l'editorialTraditional industry is experiencing a worldwide development with Industry 4.0. Wireless sensor networks (WSNs) have a main role in this revolution as an essential part of data acquisition. The way in which WSNs are powered ... -
Modem gain-cell memories in advanced technologies
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés obertWith the advent of the slowdown in DRAM capacitor scaling [1] and the increased reliability problems of traditional 6T SRAM memories [2], industry and academia have looked for alternative memory cells. Among those, gain- ... -
Body bias generators for ultra low voltage circuits in FDSOI technology
(Institute of Electrical and Electronics Engineers (IEEE), 2018)
Text en actes de congrés
Accés restringit per política de l'editorialElectronic circuits powered at ultra low voltages (300 mV and below) are desirable for their low energy and power consumption. However, the performance at such low power voltage is severely degraded. FDSOI technology, with ... -
Memristive cellular automata for modeling of epileptic brain activity
(2018)
Text en actes de congrés
Accés obertCellular Automata (CA) is a nature-inspired and widespread computational model which is based on the collective and emergent parallel computing capability of units (cells) locally interconnected in an abstract brain-like ... -
Coupled physarum-inspired memristor oscillators for neuron-like operations
(2018)
Text en actes de congrés
Accés obertUnconventional computing has been studied intensively, even after the appearance of CMOS technology. Currently, it has returned to the spotlight because CMOS is about to reach its physical limits, given that the constant ... -
Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level
(Institute of Electrical and Electronics Engineers (IEEE), 2017)
Comunicació de congrés
Accés restringit per política de l'editorialThis paper explores the feasibility, in terms of performance and reliability, of gain-cell embedded DRAM (eDRAM) to be operative at sub-threshold range, when they are implemented with 10 nm FinFET devices. The use of ... -
An on-line test strategy and analysis for a 1T1R crossbar memory
(Institute of Electrical and Electronics Engineers (IEEE), 2017)
Text en actes de congrés
Accés obertMemristors are emerging devices known by their nonvolability, compatibility with CMOS processes and high density in circuits density in circuits mostly owing to the crossbar nanoarchitecture. One of their most notable ...
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