Recent Submissions

  • On the variability-aware design of memristor-based logic circuits 

    Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    Ever since the advent of the first TiO 2 -based memristor and the respective linear model published by Hewlett-Packard Labs, several behavioral models of memristors have been published. Such models capture the fundamental ...
  • Variability-tolerant memristor-based ratioed logic in crossbar array 

    Escudero López, Manuel; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja; Vourkas, Ioannis (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    The advent of the first TiO2-based memristor in 2008 revived the scientific interest both from academia and industry for this de- vice technology, with several emerging applications including that of logic circuits. Several ...
  • Multi-valued logic circuits on graphene quantum point contact devices 

    Rallis, Konstantinos; Sirakoulis, Georgios; Karafyllidis, Ioannis; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    Graphene quantum point contacts (G-QPC) combine switching operations with quantized conductance, which can be modulated by top and back gates. Here we use the conductance quantization to design and simulate multi-valued ...
  • Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology 

    Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafria, M.; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V. (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Restricted access - publisher's policy
    Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ...
  • Resistive switching behavior seen from the energy point of view 

    Gómez Mir, Jorge Tomás; Abusleme Hoffman, Angel; Vourkas, Ioannis; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    The technology of Resistive Switching (RS) devices (memristors) is continuously maturing on its way towards viable commercial establishment. So far, the change of resistance has been identified as a function of the applied ...
  • A comprehensive method to taxonomize mechanical energy harvesting technologies 

    Diez, P.L.; Gabilondo, I.; Alarcón Cot, Eduardo José; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Restricted access - publisher's policy
    Traditional industry is experiencing a worldwide development with Industry 4.0. Wireless sensor networks (WSNs) have a main role in this revolution as an essential part of data acquisition. The way in which WSNs are powered ...
  • Modem gain-cell memories in advanced technologies 

    Amat Bertran, Esteve; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    With the advent of the slowdown in DRAM capacitor scaling [1] and the increased reliability problems of traditional 6T SRAM memories [2], industry and academia have looked for alternative memory cells. Among those, gain- ...
  • Body bias generators for ultra low voltage circuits in FDSOI technology 

    Justo, Diego; Nunes Cavalheiro, David; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Restricted access - publisher's policy
    Electronic circuits powered at ultra low voltages (300 mV and below) are desirable for their low energy and power consumption. However, the performance at such low power voltage is severely degraded. FDSOI technology, with ...
  • Memristive cellular automata for modeling of epileptic brain activity 

    Karamani, Rafallia; Fyrigos, Iosif; Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio (2018)
    Conference report
    Open Access
    Cellular Automata (CA) is a nature-inspired and widespread computational model which is based on the collective and emergent parallel computing capability of units (cells) locally interconnected in an abstract brain-like ...
  • Coupled physarum-inspired memristor oscillators for neuron-like operations 

    Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Adamatzky, Andrew; Rubio Sola, Jose Antonio (2018)
    Conference report
    Open Access
    Unconventional computing has been studied intensively, even after the appearance of CMOS technology. Currently, it has returned to the spotlight because CMOS is about to reach its physical limits, given that the constant ...
  • Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level 

    Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
    Conference lecture
    Restricted access - publisher's policy
    This paper explores the feasibility, in terms of performance and reliability, of gain-cell embedded DRAM (eDRAM) to be operative at sub-threshold range, when they are implemented with 10 nm FinFET devices. The use of ...
  • An on-line test strategy and analysis for a 1T1R crossbar memory 

    Escudero, Manel; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Vourkas, Ioannis (Institute of Electrical and Electronics Engineers (IEEE), 2017)
    Conference report
    Open Access
    Memristors are emerging devices known by their nonvolability, compatibility with CMOS processes and high density in circuits density in circuits mostly owing to the crossbar nanoarchitecture. One of their most notable ...

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