Recent Submissions

  • Influence of punch trough stop layer and well depths on the robustness of bulk FinFETs to heavy ions impact 

    Calomarde Palomino, Antonio; Manich Bou, Salvador; Rubio Sola, Jose Antonio; Gamiz, Francisco (Institute of Electrical and Electronics Engineers (IEEE), 2022-05-02)
    Article
    Open Access
    This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 ...
  • CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging 

    Crespo Yepes, Albert; Nasarre Campo, Carles; Garsot Borras, Norbert; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Nafría Maqueda, Montserrat (2022-05-01)
    Article
    Restricted access - publisher's policy
    In this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ...
  • A 3–5-GHz, 385–540-ps CMOS true time delay element for ultra-wideband antenna arrays 

    Aghazadeh Dafsari, Seyed Rasoul; Martínez García, Herminio; Barajas Ojeda, Enrique; Saberkari, Alireza (Elsevier, 2022-05-01)
    Article
    Restricted access - publisher's policy
    This paper proposes an all-pass filter-based true time delay (TTD) element covering a 3–5-GHz ultra-wideband (UWB) frequency. The proposed TTD element designed in a standard 0.18-µm CMOS technology achieves a tunable delay ...
  • Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements 

    Crespo Yepes, Albert; Ramos Hortal, Regina; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-10-01)
    Article
    Restricted access - publisher's policy
    In this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ...
  • Semi-analytic discrete time model of a 1-stage CC-CP 

    Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (2019-11-20)
    Research report
    Open Access
    This paper employs a linear, discrete-time State- Space model of a CMOS Cross-Coupled Charge Pump (CCCP.) The discrete-time model is based on the analytic solution of the differential equations at each semi-period. This ...
  • Analysis of random body bias application in FDSOI cryptosystems as a countermeasure to leakage-based power analysis attacks 

    Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2021)
    Article
    Open Access
    This paper analyses a novel countermeasure to Leakage Power Analysis Attacks based on the application of a random Body Bias voltage level at the beginning of the encryption process. The countermeasure effectiveness is ...
  • Current balancing random body bias in FDSOI cryptosystems as a countermeasure to leakage power analysis attacks 

    Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2022)
    Article
    Open Access
    This paper identifies vulnerabilities to recently proposed countermeasures to leakage power analysis attacks in FDSOI systems based on the application of a random body bias. The vulnerabilities are analyzed and the relative ...
  • Data relevance-aware dynamic sensing technique with battery lifetime guarantee for wireless sensor nodes 

    Arnaiz, David; Moll Echeto, Francisco de Borja; Alarcón Cot, Eduardo José; Vilajosana, Ignasi (Institute of Electrical and Electronics Engineers (IEEE), 2021)
    Conference report
    Restricted access - publisher's policy
    Significant effort has been devoted to the development of dynamic monitoring techniques to exploit the temporal correlation among observations with the intention of improving the energy efficiency in wireless sensor nodes. ...
  • BPF-based thermal sensor circuit for on-chip testing of RF circuits 

    Altet Sanahujes, Josep; Barajas Ojeda, Enrique; Mateo Peña, Diego; Billong, Alexandre; Aragonès Cervera, Xavier; Perpiñà Gilabet, Xavier; Reverter Cubarsí, Ferran (Multidisciplinary Digital Publishing Institute (MDPI), 2021-01)
    Article
    Open Access
    A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 µm complementary metal-oxide-semiconductor (CMOS) ...
  • Electronic properties of graphene nanoribbons with defects 

    Rallis, Konstantinos; Dimitrakis, Panagiotis; Karafydillis, Ioannis; Rubio Sola, Jose Antonio; Sirakoulis, Georgios (2021-01-27)
    Article
    Open Access
    Graphene nanoribbons (GNRs) are the most important emerging Graphene structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated GNRs contain lattice ...
  • VIA: A smart scratchpad for vector units with application to sparse matrix computations 

    Pavón Rivera, Julián; Vargas Valdivieso, Iván; Barredo Ferreira, Adrián; Marimon Illana, Joan; Moreto Planas, Miquel; Moll Echeto, Francisco de Borja; Unsal, Osman Sabri; Valero Cortés, Mateo; Cristal Kestelman, Adrián (Institute of Electrical and Electronics Engineers (IEEE), 2021)
    Conference report
    Open Access
    Sparse matrix operations are critical kernels in multiple application domains such as High Performance Computing, artificial intelligence and big data. Vector processing is widely used to improve performance on mathematical ...
  • Alternative memristor-based interconnect topologies for fast adaptive synchronization of chaotic circuits 

    Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio (2020-09)
    Article
    Restricted access - publisher's policy
    Resistive switching devices (memristors) constitute an emerging device technology promising for a vari- ety of applications that are currently being studied. In this context, the use of memristors as coupling el- ements ...

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