Ara es mostren els items 13-24 de 254

    • A 3–5-GHz, 385–540-ps CMOS true time delay element for ultra-wideband antenna arrays 

      Aghazadeh Dafsari, Seyed Rasoul; Martínez García, Herminio; Barajas Ojeda, Enrique; Saberkari, Alireza (Elsevier, 2022-05-01)
      Article
      Accés restringit per política de l'editorial
      This paper proposes an all-pass filter-based true time delay (TTD) element covering a 3–5-GHz ultra-wideband (UWB) frequency. The proposed TTD element designed in a standard 0.18-µm CMOS technology achieves a tunable delay ...
    • Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements 

      Crespo Yepes, Albert; Ramos Hortal, Regina; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-10-01)
      Article
      Accés obert
      In this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ...
    • Semi-analytic discrete time model of a 1-stage CC-CP 

      Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (2019-11-20)
      Report de recerca
      Accés obert
      This paper employs a linear, discrete-time State- Space model of a CMOS Cross-Coupled Charge Pump (CCCP.) The discrete-time model is based on the analytic solution of the differential equations at each semi-period. This ...
    • Analysis of random body bias application in FDSOI cryptosystems as a countermeasure to leakage-based power analysis attacks 

      Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2021)
      Article
      Accés obert
      This paper analyses a novel countermeasure to Leakage Power Analysis Attacks based on the application of a random Body Bias voltage level at the beginning of the encryption process. The countermeasure effectiveness is ...
    • Current balancing random body bias in FDSOI cryptosystems as a countermeasure to leakage power analysis attacks 

      Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Article
      Accés obert
      This paper identifies vulnerabilities to recently proposed countermeasures to leakage power analysis attacks in FDSOI systems based on the application of a random body bias. The vulnerabilities are analyzed and the relative ...
    • Data relevance-aware dynamic sensing technique with battery lifetime guarantee for wireless sensor nodes 

      Arnaiz, David; Moll Echeto, Francisco de Borja; Alarcón Cot, Eduardo José; Vilajosana, Ignasi (Institute of Electrical and Electronics Engineers (IEEE), 2021)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Significant effort has been devoted to the development of dynamic monitoring techniques to exploit the temporal correlation among observations with the intention of improving the energy efficiency in wireless sensor nodes. ...
    • BPF-based thermal sensor circuit for on-chip testing of RF circuits 

      Altet Sanahujes, Josep; Barajas Ojeda, Enrique; Mateo Peña, Diego; Billong, Alexandre; Aragonès Cervera, Xavier; Perpiñà Gilabet, Xavier; Reverter Cubarsí, Ferran (Multidisciplinary Digital Publishing Institute (MDPI), 2021-01)
      Article
      Accés obert
      A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 µm complementary metal-oxide-semiconductor (CMOS) ...
    • Electronic properties of graphene nanoribbons with defects 

      Rallis, Konstantinos; Dimitrakis, Panagiotis; Karafydillis, Ioannis; Rubio Sola, Jose Antonio; Sirakoulis, Georgios (2021-01-27)
      Article
      Accés obert
      Graphene nanoribbons (GNRs) are the most important emerging Graphene structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated GNRs contain lattice ...
    • VIA: A smart scratchpad for vector units with application to sparse matrix computations 

      Pavón Rivera, Julián; Vargas Valdivieso, Iván; Barredo Ferreira, Adrián; Marimon Illana, Joan; Moretó Planas, Miquel; Moll Echeto, Francisco de Borja; Unsal, Osman Sabri; Valero Cortés, Mateo; Cristal Kestelman, Adrián (Institute of Electrical and Electronics Engineers (IEEE), 2021)
      Text en actes de congrés
      Accés obert
      Sparse matrix operations are critical kernels in multiple application domains such as High Performance Computing, artificial intelligence and big data. Vector processing is widely used to improve performance on mathematical ...
    • Alternative memristor-based interconnect topologies for fast adaptive synchronization of chaotic circuits 

      Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio (2020-09)
      Article
      Accés obert
      Resistive switching devices (memristors) constitute an emerging device technology promising for a vari- ety of applications that are currently being studied. In this context, the use of memristors as coupling el- ements ...
    • Noise-induced Performance Enhancement of Variability-aware Memristor Networks 

      Ntinas, Vasileios; Fyrigos, Iosif; Sirakoulis, Georgios; Rubio Sola, Jose Antonio; Martin Martinez, Javier; Rodriguez, Rosana; Nafría Maqueda, Montserrat (2019)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Memristor networks are capable of low-power, massive parallel processing and information storage. Moreover, they have widely used for a vast number of intelligent data analysis applications targeting mobile edge devices ...
    • Experimental investigation of memristance enhancement 

      Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios; Rodriguez, Rosana; Nafría Maqueda, Montserrat (2019)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Memristor devices are two-terminal nanoscale circuit elements that exhibit nonvolatile information storing and can be manufactured in ultra-dense arrays with low-power operation. Although, theoretically, memristors are ...