Now showing items 1-12 of 210

  • Aging in CMOS RF linear power amplifiers: experimental comparison and modeling 

    Aragonès Cervera, Xavier; Mateo Peña, Diego; Barajas Ojeda, Enrique; Crespo-Yepes, A.; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2019)
    Conference report
    Restricted access - publisher's policy
    This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ...
  • On the variability-aware design of memristor-based logic circuits 

    Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    Ever since the advent of the first TiO 2 -based memristor and the respective linear model published by Hewlett-Packard Labs, several behavioral models of memristors have been published. Such models capture the fundamental ...
  • Variability-tolerant memristor-based ratioed logic in crossbar array 

    Escudero López, Manuel; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja; Vourkas, Ioannis (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    The advent of the first TiO2-based memristor in 2008 revived the scientific interest both from academia and industry for this de- vice technology, with several emerging applications including that of logic circuits. Several ...
  • Multi-valued logic circuits on graphene quantum point contact devices 

    Rallis, Konstantinos; Sirakoulis, Georgios; Karafyllidis, Ioannis; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    Graphene quantum point contacts (G-QPC) combine switching operations with quantized conductance, which can be modulated by top and back gates. Here we use the conductance quantization to design and simulate multi-valued ...
  • Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology 

    Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafria, M.; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V. (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Restricted access - publisher's policy
    Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ...
  • Resistive switching behavior seen from the energy point of view 

    Gómez Mir, Jorge Tomás; Abusleme Hoffman, Angel; Vourkas, Ioannis; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    The technology of Resistive Switching (RS) devices (memristors) is continuously maturing on its way towards viable commercial establishment. So far, the change of resistance has been identified as a function of the applied ...
  • Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging 

    Perpinyà, Xavier; Reverter Cubarsí, Ferran; León, Javier; Barajas Ojeda, Enrique; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2018-01-01)
    Article
    Open Access
    The viability of using off-chip single-shot imaging techniques for local thermal testing in integrated Radio Frequency (RF) power amplifiers (PA’s) is analyzed. With this approach, the frequency response of the output power ...
  • A comprehensive method to taxonomize mechanical energy harvesting technologies 

    Diez, P.L.; Gabilondo, I.; Alarcón Cot, Eduardo José; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
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    Traditional industry is experiencing a worldwide development with Industry 4.0. Wireless sensor networks (WSNs) have a main role in this revolution as an essential part of data acquisition. The way in which WSNs are powered ...
  • A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI 

    Diaz Fortuny, Javier; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Castro López, Rafael; Roca Moreno, Elisenda; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Mateo Peña, Diego; Fernández Fernández, Francisco V.; Nafría Maqueda, Montserrat (2018-01-01)
    Article
    Open Access
    Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ...
  • Modem gain-cell memories in advanced technologies 

    Amat Bertran, Esteve; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    With the advent of the slowdown in DRAM capacitor scaling [1] and the increased reliability problems of traditional 6T SRAM memories [2], industry and academia have looked for alternative memory cells. Among those, gain- ...
  • Optimization of FinFET-based gain cells for low power sub-vt embedded drams 

    Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2018-06-01)
    Article
    Open Access
    Sub-threshold circuits (sub-V T) are a promising alternative in the implementation of low power electronics. The implementation of gain-cell embedded DRAMs (eDRAMs) based on FinFET devices requires a careful design to ...
  • Body bias generators for ultra low voltage circuits in FDSOI technology 

    Justo, Diego; Nunes Cavalheiro, David; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Restricted access - publisher's policy
    Electronic circuits powered at ultra low voltages (300 mV and below) are desirable for their low energy and power consumption. However, the performance at such low power voltage is severely degraded. FDSOI technology, with ...