Characterization of GEN2 PAMAM dendrimers as ETLs for PV cells

Abstract

Semiconductor electronic devices are fundamental for technology and speci cally for solar cells. Their e ciency is crucial for the actual need of renewable energies and the resistance between semiconductor and metal are one of the factors that a ect their performance. In this article we follow the job already done by the MNT group in studying organic layers in contacts, characterizing the generation 2 dendrimer PAMAM as ETL in n-type silicon. The results show that for moderate concentrations the PAMAM acts as a good and promising contact