Circuit topology and synthesis flow co-design for the development of computational ReRAM
Visualitza/Obre
10.1109/NANO54668.2022.9928734
Inclou dades d'ús des de 2022
Cita com:
hdl:2117/381474
Tipus de documentText en actes de congrés
Data publicació2022
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés obert
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Abstract
Emerging memory technologies will play a decisive role in the quest for more energy-efficient computing systems. Computational ReRAM structures based on resistive switching devices (memristors) have been explored for in-memory computations using the resistance of ReRAM cells for storage and for logic I/O representation. Such approach presents three major challenges: the support for a memristor-oriented logic style, the ad-hoc design of memory array driving circuitry for memory and logic operations, and the development of dedicated synthesis tools to instruct the multi-level operations required for the execution of an arbitrary logic function in memory. This work contributes towards the development of an automated design flow for ReRAM-based computational memories, highlighting some important HW-SW co-design considerations. We briefly present a case study concerning a synthesis flow for a nonstateful logic style and the co-design of the underlying 1T1R crossbar array driving circuit. The prototype of the synthesis flow is based on the ABC tool and the Z3 solver. It executes fast owing to the level-by-level mapping of logic gates. Moreover, it delivers a mapping that minimizes the logic function latency through parallel logic operations, while also using the less possible ReRAM cells.
Descripció
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CitacióFernandez, C.; Vourkas, I.; Rubio, A. Circuit topology and synthesis flow co-design for the development of computational ReRAM. A: IEEE International Conference on Nanotechnology. "2022 IEEE 22nd International Conference on Nanotechnology (NANO): Palma de Mallorca, Spain: July 4-8, 2022: proceedings". Institute of Electrical and Electronics Engineers (IEEE), 2022, p. 295-298. ISBN 1-66545-225-0. DOI 10.1109/NANO54668.2022.9928734.
ISBN1-66545-225-0
Versió de l'editorhttps://ieeexplore.ieee.org/document/9928734
Col·leccions
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Topology.pdf | article principal | 836,5Kb | Visualitza/Obre |