Stochastic resonance effect in binary STDP performed by RRAM devices

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Nafría Maqueda, MontserratMés informació
Rubio Sola, Jose AntonioMés informacióMés informacióMés informació
Ntinas, VasileiosMés informacióMés informació
Document typeConference report
Defense date2022
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
ProjectTHE VARIABILITY CHALLENGE IN NANO-CMOS AND BEYOND-CMOS: NOVEL IC DESIGN PARADIGMS FOR MITIGATION AND EXPLOITATION (VIGILANT-UPC) (AEI-PID2019-103869RB-C33)
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CitationSalvador, E. [et al.]. Stochastic resonance effect in binary STDP performed by RRAM devices. A: IEEE International Conference on Nanotechnology. "2022 IEEE 22nd International Conference on Nanotechnology (NANO): Palma de Mallorca, Spain: July 4-8, 2022: proceedings". Institute of Electrical and Electronics Engineers (IEEE), 2022, p. 449-452. ISBN 1-66545-225-0. DOI 10.1109/NANO54668.2022.9928738. 
URIhttp://hdl.handle.net/2117/381472
DOI10.1109/NANO54668.2022.9928738
ISBN1-66545-225-0
Publisher versionhttps://ieeexplore.ieee.org/document/9928738
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