Hole selective contacts based on transition metal oxides for c-Ge thermophotovoltaic devices
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10.1016/j.solmat.2022.112156
Inclou dades d'ús des de 2022
Cita com:
hdl:2117/380971
Tipus de documentArticle
Data publicació2023-03-01
Condicions d'accésAccés obert
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Reconeixement-NoComercial-SenseObraDerivada 4.0 Internacional
ProjecteCONTACTOS SELECTIVOS Y CAPAS ACTIVOS PARA DISPOSITIVOS DE ENERGIA (AEI-PID2019-109215RB-C41)
DESARROLLO DE COMPUESTOS MIXTOS CALCOGENUROS-HALUROS DE BAJA DIMENSION POR RUTAS FISICAS PARA APLICACIONES EN DISPOSITIVOS FOTOVOLTAICOS TANDEM (AEI-PID2020-116719RB-C41)
DISPOSITIVOS DE GERMANIO DE ALTA EFICIENCIA PARA APLICACIONES TERMOFOTOVOLTAICAS DE BAJO COSTE (AEI-PID2020-115719RB-C21)
DESARROLLO DE COMPUESTOS MIXTOS CALCOGENUROS-HALUROS DE BAJA DIMENSION POR RUTAS FISICAS PARA APLICACIONES EN DISPOSITIVOS FOTOVOLTAICOS TANDEM (AEI-PID2020-116719RB-C41)
DISPOSITIVOS DE GERMANIO DE ALTA EFICIENCIA PARA APLICACIONES TERMOFOTOVOLTAICAS DE BAJO COSTE (AEI-PID2020-115719RB-C21)
Abstract
Thermophotovoltaics has become a very attractive solution for heat-to-electricity conversion due to its excellent conversion efficiencies. However, further research is needed to reduce the device cost which is typically based on III-V semiconductors. To tackle this limitation, crystalline germanium (c-Ge) has been proposed as an excellent substrate for low-cost devices. One of the key advances behind high system efficiencies is the excellent reflectance of the out-of-band photons at the rear surface of the photovoltaic device. These photons with lower energy than the absorber bandgap are reflected back to the thermal emitter reducing its thermal losses. In this work, we explore the performance of hole selective contacts based on evaporated transition metal oxides (MoOx, VOx, WOx) to be introduced at the rear surface of c-Ge devices. Regarding electrical properties, we characterize the selectivity of the contact by measuring effective surface recombination velocity (Seff) and contact resistivity (¿C). Best results are obtained with MoOx contacted by Ag/ITO with Seff = 588 cm/s and ¿C = 55.6 mO cm2 which can be improved by using gold as a metal contact leading to Seff = 156 cm/s and ¿C = 60.9 mO cm2. Regarding out-of-band reflectance, it is better for the case of Ag/ITO/MoOx contact with 87.5% compared to 78.9% for Au/MoOx when a 1473 K black body spectrum is used. Device simulations show potential system efficiencies in the range of 18–19% which are comparable to the best reported efficiencies using c-Ge thermophotovoltaic devices.
Descripció
© 2023 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
CitacióMartin, I. [et al.]. Hole selective contacts based on transition metal oxides for c-Ge thermophotovoltaic devices. "Solar energy materials and solar cells", 1 Març 2023, vol. 251, article 112156.
ISSN0927-0248
Versió de l'editorhttps://www.sciencedirect.com/science/article/pii/S0927024822005736
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