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Using temperature as observable of the frequency response of RF CMOS amplifiers
dc.contributor.author | Aldrete Vidrio, Héctor |
dc.contributor.author | Slhi, M A |
dc.contributor.author | Altet Sanahujes, Josep |
dc.contributor.author | Gruby, S |
dc.contributor.author | Mateo Peña, Diego |
dc.contributor.author | Michel, H |
dc.contributor.author | Clerjaud, L |
dc.contributor.author | Rampnous, J M |
dc.contributor.author | Rubio Sola, Jose Antonio |
dc.contributor.author | Claeys, Wilfrid |
dc.contributor.author | Dilhaire, W Claeys I S |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2022-09-30T12:25:40Z |
dc.date.available | 2022-09-30T12:25:40Z |
dc.date.issued | 2008 |
dc.identifier.citation | Aldrete, H.E. [et al.]. Using temperature as observable of the frequency response of RF CMOS amplifiers. A: IEEE European Test Symposium. "13th IEEE European Test Symposium (ETS): Verbania, Italy: May 25/29, 2008: proceedings". Institute of Electrical and Electronics Engineers (IEEE), 2008, p. 47-52. ISBN 978-0-7695-3150-2. DOI 10.1109/ETS.2008.15. |
dc.identifier.isbn | 978-0-7695-3150-2 |
dc.identifier.uri | http://hdl.handle.net/2117/373797 |
dc.description.abstract | The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer. |
dc.format.extent | 6 p. |
dc.language.iso | eng |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Radio frequency identification systems |
dc.subject.other | Frequency response |
dc.subject.other | Radio frequency |
dc.subject.other | Radiofrequency amplifiers |
dc.subject.other | Temperature sensors |
dc.subject.other | Temperature measurement |
dc.subject.other | Circuit optimization |
dc.subject.other | Energy consumption |
dc.subject.other | Silicon |
dc.subject.other | Frequency measurement |
dc.subject.other | Integrated circuit measurements |
dc.title | Using temperature as observable of the frequency response of RF CMOS amplifiers |
dc.type | Conference report |
dc.subject.lemac | Sistemes d'identificació per radiofreqüència |
dc.contributor.group | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
dc.identifier.doi | 10.1109/ETS.2008.15 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | https://ieeexplore.ieee.org/document/4556027 |
dc.rights.access | Open Access |
local.identifier.drac | 2429295 |
dc.description.version | Postprint (author's final draft) |
local.citation.author | Aldrete, H.E.; Slhi, M.; Altet, J.; Gruby, S.; Mateo, D.; Michel, H.; Clerjaud, L.; Rampnous, J.; Rubio, A.; Claeys, W.; Dilhaire, W. |
local.citation.contributor | IEEE European Test Symposium |
local.citation.publicationName | 13th IEEE European Test Symposium (ETS): Verbania, Italy: May 25/29, 2008: proceedings |
local.citation.startingPage | 47 |
local.citation.endingPage | 52 |