Using temperature as observable of the frequency response of RF CMOS amplifiers

Document typeConference report
Defense date2008
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial
property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public
communication or transformation of this work are prohibited without permission of the copyright holder
Abstract
The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.
CitationAldrete, H.E. [et al.]. Using temperature as observable of the frequency response of RF CMOS amplifiers. A: IEEE European Test Symposium. "13th IEEE European Test Symposium (ETS): Verbania, Italy: May 25/29, 2008: proceedings". Institute of Electrical and Electronics Engineers (IEEE), 2008, p. 47-52. ISBN 978-0-7695-3150-2. DOI 10.1109/ETS.2008.15.
ISBN978-0-7695-3150-2
Publisher versionhttps://ieeexplore.ieee.org/document/4556027
Files | Description | Size | Format | View |
---|---|---|---|---|
Using_Temperatu ... _of_RF_CMOS_Amplifiers.pdf | 1,027Mb | View/Open |