Using temperature as observable of the frequency response of RF CMOS amplifiers
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
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The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.
CitationAldrete, H.E. [et al.]. Using temperature as observable of the frequency response of RF CMOS amplifiers. A: IEEE European Test Symposium. "13th IEEE European Test Symposium (ETS): Verbania, Italy: May 25/29, 2008: proceedings". Institute of Electrical and Electronics Engineers (IEEE), 2008, p. 47-52. ISBN 978-0-7695-3150-2. DOI 10.1109/ETS.2008.15.
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