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dc.contributor.authorRos Costals, Eloi
dc.contributor.authorMasmitjà Rusiñol, Gerard
dc.contributor.authorAlmache Hernández, Rosa Estefanía
dc.contributor.authorPusay Villarroel, Benjamín Andrés
dc.contributor.authorTiwari, Kunal
dc.contributor.authorSaucedo Silva, Edgardo Ademar
dc.contributor.authorJustin Raj, Chellan
dc.contributor.authorChul Kim, Byung
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorMartín García, Isidro
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor.otherUniversitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica
dc.date.accessioned2022-03-04T13:17:58Z
dc.date.available2022-03-04T13:17:58Z
dc.date.issued2022
dc.identifier.citationRos, E. [et al.]. Atomic layer deposition of vanadium oxide films for crystalline silicon solar cells. "Materials advances", 2022, vol. 3, núm. 1, p. 337-345.
dc.identifier.issn2633-5409
dc.identifier.urihttp://hdl.handle.net/2117/363435
dc.description.abstractTransition metal oxides (TMOs) are promising materials to develop selective contacts on high-efficiency crystalline silicon solar cells. Nevertheless, the standard deposition technique used for TMOs is thermal evaporation, which could add potential scalability problems to industrial photovoltaic fabrication processes. As an alternative, atomic layer deposition (ALD) is a thin film deposition technique already used for dielectric deposition in the semiconductor device industry that has a straightforward up scalable design. This work reports the results of vanadium oxide (V2O5) films deposited by ALD acting as a hole-selective contact for n-type crystalline silicon (c-Si) solar cell frontal transparent contact without the additional PECVD passivating layer. A reasonable specific contact resistance of 100 mO cm2 was measured by the transfer length method. In addition, measurements suggest the presence of an inversion layer at the c-Si/V2O5 interface with a sheet resistance of 15 kO sq-1. The strong band bending induced at the c-Si surface was confirmed through capacitance–voltage measurements with a built-in voltage value of 683 mV. Besides low contact resistance, vanadium oxide films provide excellent surface passivation with effective lifetime values of up to 800 µs. Finally, proof-of-concept both-side contacted solar cells exhibit efficiencies beyond 18%, shedding light on the possibilities of TMOs deposited by the atomic layer deposition technique.
dc.format.extent9 p.
dc.language.isoeng
dc.publisherRoyal Society of Chemistry (RSC)
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshElectronics
dc.subject.lcshElectric power
dc.subject.otherTransition metal oxides (TMOs)
dc.subject.otherSilicon solar cells
dc.subject.otherIndustrial photovoltaic fabrication
dc.titleAtomic layer deposition of vanadium oxide films for crystalline silicon solar cells
dc.typeArticle
dc.subject.lemacElectrònica
dc.subject.lemacEnergia elèctrica
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1039/d1ma00812a
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://pubs.rsc.org/en/content/articlelanding/2022/MA/D1MA00812A
dc.rights.accessOpen Access
local.identifier.drac32524264
dc.description.versionPostprint (updated version)
local.citation.authorRos, E.; Masmitja, G.; Almache, R.; Pusay, B.; Tiwari, K.; Saucedo Silva, Edgardo; Justin Raj, C.; Chul Kim, B.; Puigdollers, J.; Martin, I.; Voz, C.; Ortega, P.
local.citation.publicationNameMaterials advances
local.citation.volume3
local.citation.number1
local.citation.startingPage337
local.citation.endingPage345
dc.description.sdgObjectius de Desenvolupament Sostenible::7 - Energia Assequible i No Contaminant


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