Time and frequency domain characterization of switching losses in GaN FETs power converters
Cita com:
hdl:2117/363185
Tipus de documentArticle
Data publicació2022-03
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés obert
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Reconeixement-NoComercial-SenseObraDerivada 4.0 Internacional
Abstract
This work presents a methodology for the time-frequency characterization of the switching losses in Gallium Nitride Field Effect Transistors used in power electronics applications, particularly in DC-DC converters. Typically, switching losses are measured in the time-domain through the integration of the instantaneous power, that is, the product of the voltage multiplied by the current, during the turn-on and turn-off transients. Nonetheless, as novel power transistors allow for switching times in the nanosecond range, the accuracy of such measurements is compromised by the limitations of the probe-oscilloscope systems in terms of bandwidth and dynamic range. Here, we analyze the time-domain switching loss measurement method, and then, through a complementary setup it is demonstrated how to validate the results in the frequency domain. A DC-DC half-bridge buck converter circuit based in the EPC2001C was used as representative test sample. Less than 1% of difference in critical parameters such as rise-time, pulse width, state-levels and, switching frequency, is encountered between the time and frequency domain approaches. Moreover, the measurement uncertainty is analyzed and estimated to be between 1% and 8%. This work allows for highly confident switching loss measurements, a better understanding of the switching phenomena and of the measurement system performance.
Descripció
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
CitacióAzpurua, M.A.; Pous, M.; Silva, F. Time and frequency domain characterization of switching losses in GaN FETs power converters. "IEEE transactions on power electronics", Març 2022, vol. 37, núm. 3, p. 3219-3232.
ISSN0885-8993
Versió de l'editorhttps://ieeexplore.ieee.org/document/9540334
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