Performance assessment of a wide-bandgap-semiconductor dual-active-rridge converter for electrical vehicles
Visualitza/Obre
10.1109/ISIE45552.2021.9576249
Inclou dades d'ús des de 2022
Cita com:
hdl:2117/358984
Tipus de documentText en actes de congrés
Data publicació2021
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés obert
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Abstract
Dc-dc converters can be found in different kinds of electric vehicles (EVs). Their main function is to accommodate voltages and currents to the motor or other EV systems requirements. The use of wide-bandgap (WBG) devices can improve the efficiency of silicon-based power converters, qualifying also for higher switching frequencies. In this article the features of a dual active bridge (DAB) converter are studied. The high voltage side of the DAB is implemented with Silicon Carbide (SiC) MOSFETs. For the low voltage side two types of devices are used: either Gallium Nitride (GaN) enhancement high-electronmobility transistors (e-HEMTs) or SiC MOSFETs. The influence of switching frequency and output power on the efficiency are evaluated. The parallel connection of GaN devices is proposed to overcome the device current limits and thus increase the overall DAB converter output power. A feedback controller has been designed to reduce the effects on the output voltage of load changes. The DAB converter evaluation has been realized by using MATLAB/Simulink and PLECS software.
CitacióBerbel, N. [et al.]. Performance assessment of a wide-bandgap-semiconductor dual-active-rridge converter for electrical vehicles. A: IEEE International Symposium on Industrial Electronics. "ISIE 2021: IEEE 30th International Symposium on Industrial Electronics: Kyoto, Japan: June 20-23: proceedings". Institute of Electrical and Electronics Engineers (IEEE), 2021, p. 1-6. DOI 10.1109/ISIE45552.2021.9576249.
Versió de l'editorhttps://ieeexplore.ieee.org/document/9576249
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