Manufacturing Issues of BEOL CMOS-MEMS Devices
Visualitza/Obre
10.1109/ACCESS.2021.3086867
Inclou dades d'ús des de 2022
Cita com:
hdl:2117/352851
Tipus de documentArticle
Data publicació2021-06-07
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés obert
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Reconeixement-NoComercial-SenseObraDerivada 3.0 Espanya
Abstract
In this paper we present a comprehensive report on the issues found during the manufacturing of high-yield CMOS-MEMS sensors based on vapor-phase hydrogen fluoride (vapor- HF ) oxide etching. During the study we have identified the main issues affecting CMOS-MEMS high-yield manufacturing regarding the silicon oxide as a sacrificial material, the passivation as a release mask, the BEOL as structural material for MEMS design and the aluminum-sputtering as a sealing layer for the MEMS cavity. This study has been carried out by systematically analyzing over 100 full wafers in 10 different runs on four different foundries using 0.5 µm , 0.18 µm and 0.15 µm CMOS processes, containing both test structures and full-sensor designs.
Descripció
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CitacióValle, J. [et al.]. Manufacturing Issues of BEOL CMOS-MEMS Devices. "IEEE access", 7 Juny 2021, vol. 9, p. 83149-83162.
ISSN2169-3536
Versió de l'editorhttps://ieeexplore.ieee.org/document/9447709
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Manufacturing_Issues_of_BEOL_CMOS-MEMS_Devices.pdf | 5,452Mb | Visualitza/Obre |