Enhanced serial RRAM cell for unpredictable bit generation
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In this letter, the serial configuration of two RRAMs is used as a basic cell to generate an unpredictable bit. The basis of the operation considers starting from the Low Resistive State (LRS) in both devices (initialization step), then, one of them is switched to the High Resistive State (HRS) (bit generation step) without knowing, in advance, which one is the switching device (unmasking step). In this proposal, the larger resistance variability of HRS compared to LRS is considered to improve the masking performance of the cell (masking step). The presented experimental results are a proof-of-concept of the applicability of the proposal.
CitationRodriguez-Montanes, R. [et al.]. Enhanced serial RRAM cell for unpredictable bit generation. "Solid-state electronics", Maig 2021, vol. 183, p. 108059:1-108059:6.