Simulation of electron exoemission induced by material loading
Visualitza/Obre
Estadístiques de LA Referencia / Recolecta
Inclou dades d'ús des de 2022
Cita com:
hdl:2117/344704
Realitzat a/ambRīgas Tehniskā universitāte
Tipus de documentProjecte Final de Màster Oficial
Data2021-11-01
Condicions d'accésAccés obert
Llevat que s'hi indiqui el contrari, els
continguts d'aquesta obra estan subjectes a la llicència de Creative Commons
:
Reconeixement-NoComercial-SenseObraDerivada 3.0 Espanya
Abstract
In this thesis the connection between the elongation of the atomic bonds and the emission current in two types of materials: metals and semiconductors has been studied and identified. With this relation,two models have been constructed to simulate the emission process under strain and photostimulation. Knowing that any excitation of the electron subsystem in the solid-state exerts an influence on the emission of electrons. In total 10 metals (Na, Ca, Li, Mg, In, Zn, Pb, Sn, Fe,and Al) and 4 semiconductors (Si, Ge, GaAs and GaSb) under a tensile-strain test condition have been simulated using Matlab. The results observe a clear tendency in metals: strain reduces free electron density and thus, the workfunction of the metal is decreased enabling more electrons to be emitted with photostimulation. Contrary, in semiconductors two tendencies are observed depending on the energy transitions of the materials, as the pressure potential constant can be positive or negative. Depending on this, the work function is decreased with the strain (the case of Silicon) or increased (the rest of semiconductors), this increment reduces the emission with increasing strain and pressure in semiconductors. The results presented are self-consistent and the model can be applied successfully to account for the emission process of different metals and semiconductors. It also could be applied to different materials not studied in this thesis using appropriate parameters that need to be identified and studied with experiments
MatèriesSimulation methods, Semiconductors -- Analysis, MATLAB, Molecular structure, Metals -- Analysis, Simulació, Mètodes de, MATLAB, Estructura molecular, Metalls -- Anàlisi, Semiconductors
TitulacióMÀSTER UNIVERSITARI EN ENGINYERIA INDUSTRIAL (Pla 2014)
Col·leccions
Fitxers | Descripció | Mida | Format | Visualitza |
---|---|---|---|---|
tfm.pdf | 2,752Mb | Visualitza/Obre |