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Plasma modified silicon nitride resistive switching memories
| dc.contributor.author | Karakolis, Panagiotis |
| dc.contributor.author | Normand, Pascal |
| dc.contributor.author | Dimitrakis, Panagiotis |
| dc.contributor.author | Sygelou, L |
| dc.contributor.author | Ntinas, Vasileios |
| dc.contributor.author | Fyrigos, Iosif |
| dc.contributor.author | Karafydillis, Ioannis |
| dc.contributor.author | Sirakoulis, Georgios |
| dc.contributor.other | Universitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica |
| dc.date.accessioned | 2021-04-23T08:22:15Z |
| dc.date.issued | 2019 |
| dc.identifier.citation | Karakolis, P. [et al.]. Plasma modified silicon nitride resistive switching memories. A: IEEE/ACM International Symposium on Nanoscale Architectures. "NANOARCH 2019: IEEE/ACM International Symposium on Nanoscale Architectures: Qingdao, China: July 17-19, 2019: proceedings book". 2019, p. 1-2. ISBN 978-1-7281-5520-3. DOI 10.1109/NANOARCH47378.2019.181308. |
| dc.identifier.isbn | 978-1-7281-5520-3 |
| dc.identifier.uri | http://hdl.handle.net/2117/344209 |
| dc.description.abstract | In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching characteristics and the overall performance of the memory cell. Extensive material and electronic device characterization are presented. |
| dc.format.extent | 2 p. |
| dc.language.iso | eng |
| dc.subject | Àrees temàtiques de la UPC::Enginyeria elèctrica |
| dc.subject.other | nitride |
| dc.subject.other | resistance switching |
| dc.subject.other | resistive-switching memory (RRAM) |
| dc.subject.other | impedance spectroscopy |
| dc.subject.other | Cu electrode |
| dc.title | Plasma modified silicon nitride resistive switching memories |
| dc.type | Conference report |
| dc.subject.lemac | Impedància (Electricitat) |
| dc.subject.lemac | Resistències elèctriques |
| dc.identifier.doi | 10.1109/NANOARCH47378.2019.181308 |
| dc.relation.publisherversion | https://ieeexplore.ieee.org/abstract/document/9073660 |
| dc.rights.access | Restricted access - publisher's policy |
| local.identifier.drac | 28737313 |
| dc.description.version | Postprint (published version) |
| dc.date.lift | 10000-01-01 |
| local.citation.author | Karakolis, P.; Normand, P.; Dimitrakis, P.; Sygelou, L.; Ntinas, V.; Fyrigos, I.; Karafydillis, I.; Sirakoulis, G. |
| local.citation.contributor | IEEE/ACM International Symposium on Nanoscale Architectures |
| local.citation.publicationName | NANOARCH 2019: IEEE/ACM International Symposium on Nanoscale Architectures: Qingdao, China: July 17-19, 2019: proceedings book |
| local.citation.startingPage | 1 |
| local.citation.endingPage | 2 |