Plasma modified silicon nitride resistive switching memories

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Abstract

In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching characteristics and the overall performance of the memory cell. Extensive material and electronic device characterization are presented.

CitationKarakolis, P. [et al.]. Plasma modified silicon nitride resistive switching memories. A: IEEE/ACM International Symposium on Nanoscale Architectures. "NANOARCH 2019: IEEE/ACM International Symposium on Nanoscale Architectures: Qingdao, China: July 17-19, 2019: proceedings book". 2019, p. 1-2. ISBN 978-1-7281-5520-3. DOI 10.1109/NANOARCH47378.2019.181308.

URIhttp://hdl.handle.net/2117/344209

DOI10.1109/NANOARCH47378.2019.181308

ISBN978-1-7281-5520-3

Publisher versionhttps://ieeexplore.ieee.org/abstract/document/9073660

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