Ir al contenido (pulsa Retorno)

Universitat Politècnica de Catalunya

    • Català
    • Castellano
    • English
    • LoginRegisterLog in (no UPC users)
  • mailContact Us
  • world English 
    • Català
    • Castellano
    • English
  • userLogin   
      LoginRegisterLog in (no UPC users)

UPCommons. Global access to UPC knowledge

Banner header
69.096 UPC E-Prints
You are here:
View Item 
  •   DSpace Home
  • E-prints
  • Grups de recerca
  • HIPICS - High Performance Integrated Circuits and Systems
  • Articles de revista
  • View Item
  •   DSpace Home
  • E-prints
  • Grups de recerca
  • HIPICS - High Performance Integrated Circuits and Systems
  • Articles de revista
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Aging in CMOS RF linear power amplifiers: an experimental study

Thumbnail
View/Open
PostPrint UPC Commons.pdf (649,6Kb)
 
10.1109/TMTT.2020.3041282
 
  View UPCommons Usage Statistics
  LA Referencia / Recolecta stats
Includes usage data since 2022
Cita com:
hdl:2117/343811

Show full item record
Aragonès Cervera, XavierMés informacióMés informacióMés informació
Barajas Ojeda, EnriqueMés informacióMés informació
Crespo Yepes, Albert
Mateo Peña, DiegoMés informacióMés informacióMés informació
Rodríguez Martínez, Rosana
Martin Martínez, Javier
Nafría Maqueda, MontserratMés informació
Document typeArticle
Defense date2021-02-01
PublisherIEEE Microwave Theory and Techniques Society
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
Abstract
An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies have been implemented in a CMOS 65-nm technology: one based on a classical common-source (CS) and choke inductor and another one based on a complementary current-reuse (CR) circuit, both of them producing similar gain and output 1-dB compression point (P -1dB ). These circuits have been stressed to produce accelerated aging degradation, by applying increasing supply (V DD ) voltages or increasing RF input powers (PIN). The degradation on the transistor parameters (threshold voltage and mobility), dc bias point (I dc current), and RF performance (gain, matching, and compression point) has been simultaneously measured. This has allowed us to observe how the reduced transistor degradation in CR PA results in higher robustness in its RF parameters compared with the CS PA circuit. The equivalent root-mean-square (rms) voltages have been proposed as an observable metric to assess the combined dc + RF stress in a PA circuit. This has been applied to a semianalytical model, providing comprehension of the link between the conditions under which a circuit is operated, the degradation of the transistor parameters, and the effects on the dc current and RF performance.
Description
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
CitationAragones, X. [et al.]. Aging in CMOS RF linear power amplifiers: an experimental study. "IEEE transactions on microwave theory and techniques", 1 Febrer 2021, vol. 69, núm. 2, p. 1453-1463. 
URIhttp://hdl.handle.net/2117/343811
DOI10.1109/TMTT.2020.3041282
ISSN0018-9480
Publisher versionhttps://ieeexplore.ieee.org/document/9290396
Collections
  • HIPICS - High Performance Integrated Circuits and Systems - Articles de revista [92]
  • Departament d'Enginyeria Electrònica - Articles de revista [1.863]
  View UPCommons Usage Statistics

Show full item record

FilesDescriptionSizeFormatView
PostPrint UPC Commons.pdf649,6KbPDFView/Open

Browse

This CollectionBy Issue DateAuthorsOther contributionsTitlesSubjectsThis repositoryCommunities & CollectionsBy Issue DateAuthorsOther contributionsTitlesSubjects

© UPC Obrir en finestra nova . Servei de Biblioteques, Publicacions i Arxius

info.biblioteques@upc.edu

  • About This Repository
  • Metadata under:Metadata under CC0
  • Contact Us
  • Send Feedback
  • Privacy Settings
  • Inici de la pàgina