A memristor-based quaternary memory with adaptive noise tolerance

Abstract

Considering the constraints of CMOS technology progress at the nano-domain, memristor technology is one of the preferred alternatives to merge with and substitute CMOS-based memory circuits. At the same time to increase the bandwidth of memories, increase storage density and decrease the interconnection complexity of circuits, multiple-valued logic (MVL) based circuit memories are being introduced as an efficient alternative. As resistive random access memory (ReRAM) is a non-volatile memory and memristor cells allow analog multilevel behavior, they are suitable device to store multiple-level bits of information. Different sources of noise and perturbances may affect the original values of data during the transferring and storing processes. A hybrid scenario based on CMOS and memristor technology is proposed here to recover the stored multiple noisy-perturbed values of resistive random-access memory in an efficient way. To show the correctness of the proposed method, affected images are simulated with Matlab software at system level showing its efficiency.