Ir al contenido (pulsa Retorno)

Universitat Politècnica de Catalunya

    • Català
    • Castellano
    • English
    • LoginRegisterLog in (no UPC users)
  • mailContact Us
  • world English 
    • Català
    • Castellano
    • English
  • userLogin   
      LoginRegisterLog in (no UPC users)

UPCommons. Global access to UPC knowledge

Banner header
69.361 UPC E-Prints
You are here:
View Item 
  •   DSpace Home
  • E-prints
  • Grups de recerca
  • MNT - Grup de Recerca en Micro i Nanotecnologies
  • Articles de revista
  • View Item
  •   DSpace Home
  • E-prints
  • Grups de recerca
  • MNT - Grup de Recerca en Micro i Nanotecnologies
  • Articles de revista
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Application of quasi-steady-state photoconductance technique to lifetime measurements on crystalline germanium substrates

Thumbnail
View/Open
Manuscrito del paper (579,7Kb)
 
10.1109/JPHOTOV.2020.2981839
 
  View UPCommons Usage Statistics
  LA Referencia / Recolecta stats
Includes usage data since 2022
Cita com:
hdl:2117/330671

Show full item record
Martín García, IsidroMés informacióMés informacióMés informació
Alcañiz, A.
Jiménez Pagán, Alba
López Rodríguez, GemaMés informacióMés informacióMés informació
del Cañizo Nadal, Carlos
Datas Medina, Alejandro
Document typeArticle
Defense date2020-07-01
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
ProjectCELULAS SOLARES CON CONTACTOS POSTERIORES BASADAS EN SUBSTRATOS DELGADOS DE SILICIO CRISTALINO (AEI-TEC2017-82305-R)
Abstract
Similar to other high quality crystalline absorbers, an accurate knowledge of surface passivation of crystalline germanium (c-Ge) substrates is crucial for a straightforward improvement of photovoltaic device performance. For crystalline silicon devices, this information is typically obtained by quasi-steady-state photoconductance (QSS-PC) technique using Sinton WCT-120 tool. In this article, we explore the conditions to adapt this measurement technique to c-Ge substrates. Based on PC-1D simulations, we deduce that a minimum effective lifetime is needed corresponding to an effective diffusion length equal to the substrate thickness. Apart from this, an accurate estimation of the total photogeneration inside the c-Ge sample is also mandatory. This condition implies that the light intensity that impinges onto the sample must be measured with a c-Ge sensor, although the integrated c-Si sensor can be used for high flash intensities. Additionally, the optical factor used to evaluate sample reflectance must be also known, which is determined by measuring robust effective lifetime values under photoconductance decay conditions. Finally, knowledge about carrier mobility in c-Ge is also necessary to translate the measured photoconductance to the corresponding excess carrier density values. Lifetime measurements of passivated c-Ge substrates done by QSS-PC technique are validated by comparing them with the ones obtained by microwave photoconductance technique.
Description
© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
CitationMartin, I. [et al.]. Application of quasi-steady-state photoconductance technique to lifetime measurements on crystalline germanium substrates. "IEEE journal of photovoltaics", 1 Juliol 2020, vol. 10, núm. 4, p. 1068-1075. 
URIhttp://hdl.handle.net/2117/330671
DOI10.1109/JPHOTOV.2020.2981839
ISSN2156-3381
Publisher versionhttps://ieeexplore.ieee.org/document/9063493
Collections
  • MNT - Grup de Recerca en Micro i Nanotecnologies - Articles de revista [346]
  • Departament d'Enginyeria Electrònica - Articles de revista [1.884]
  View UPCommons Usage Statistics

Show full item record

FilesDescriptionSizeFormatView
Ge_lifetime_JPV_accepted.docxManuscrito del paper579,7Kb Microsoft Word 2007 View/Open

Browse

This CollectionBy Issue DateAuthorsOther contributionsTitlesSubjectsThis repositoryCommunities & CollectionsBy Issue DateAuthorsOther contributionsTitlesSubjects

© UPC Obrir en finestra nova . Servei de Biblioteques, Publicacions i Arxius

info.biblioteques@upc.edu

  • About This Repository
  • Metadata under:Metadata under CC0
  • Contact Us
  • Send Feedback
  • Privacy Settings
  • Inici de la pàgina