Analytical dead-band compensation for ZCS modulation applied to hybrid Si-SiC dual active bridge
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
ProjectRESOLVD - Renewable penetration levered by Efficient Low Voltage Distribution grids (EC-H2020-773715)
This paper proposes a triangular modulation with zero current switching (ZCS) for a hybrid Si-SiC isolated bidirectional DC-DC converter (IBDC). Three of the four legs in the IBDC operate at ZCS and use Si IGBTs, while the fourth operates at zero voltage switching (ZVS) and uses SiC MOSFET. In that case, the turn-off switching losses are concentrated regardless of the direction of the power. The main contribution of this paper resides in the proposed dead-band compensation mechanism. This dead-band compensation is crucial when addressing ZCS modulation and improves the overall efficiency of the full operating range. As a co-benefit, the proposed mix of semiconductor technologies can result in an effective cost reduction compared with a full SiC IBDC. The paper contains a detailed explanation of the implemented modulation applied to an IBDC. The paper contributes to deploy a theoretical implementation where the effect of parasitic capacitance on semiconductors during the dead-band is analytically considered. The presented method results are validated on a laboratory set-up using a 20 kW - 40 kHz hybrid Si-SiC IBDC.
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DatasetCapó Lliteras, M. [et al.]. (2020). Analytical dead-band Compensation for ZCS modulation applied to hybrid Si-SiC dual active bridge [Dataset]. 1 v. Universitat Politècnica de Catalunya. https://doi.org/10.5821/data-2117-337041-1 http://hdl.handle.net/2117/337041
CitationMACIÀ CAPÓ LLITERAS [et al.]. Analytical dead-band compensation for ZCS modulation applied to hybrid Si-SiC dual active bridge. "IEEE access", 2 Octubre 2020, vol. 8, p. 181577-181589.