High-efficiency reconfigurable dual-band class-F power amplifier with harmonic control network using MEMS
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hdl:2117/329785
Tipus de documentArticle
Data publicació2020-07-01
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Abstract
This letter presents a novel reconfigurable, high-efficiency class-F power amplifier (PA) structure, using a commercial GaN-HEMT, that achieves dual-band configuration not only at the fundamental frequency but also at the harmonics. With a proper harmonic tuning structure, the need for an extra filtering section is eliminated, resulting in a high dual-band efficiency with a reduced number of components and size. The reconfigurable structure uses commercial singlepole-double-throw (SPDT) and single-pole-single-throw (SPST) MEMS switches optimally placed on the stubs to select between 900 and 1800 MHz. The reconfigurable PA achieves a measured power-added efficiency (PAE) of 69.5% and a power gain of 13.6 dB while delivering an output power of 39.1 dBm at 900 MHz. At 1800 MHz, the amplifier achieves a PAE of 57.9%, a power gain of 10.5 dB, and an output power of 38.5 dBm.
Descripció
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CitacióGilasgar, M.; Barlabe, A.; Pradell, L. High-efficiency reconfigurable dual-band class-F power amplifier with harmonic control network using MEMS. "IEEE microwave and wireless components letters", 1 Juliol 2020, vol. 30, núm. 7, p. 677-680.
ISSN1531-1309
Versió de l'editorhttps://ieeexplore.ieee.org/document/9103570
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