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Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections
dc.contributor.author | Almudever, Carmen G. |
dc.contributor.author | Rubio Sola, Jose Antonio |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2015-03-27T10:51:43Z |
dc.date.available | 2017-02-01T01:30:41Z |
dc.date.created | 2015-02-01 |
dc.date.issued | 2015-02-01 |
dc.identifier.citation | Almudever, C.G.; Rubio, A. Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections. "Microelectronics reliability", 01 Febrer 2015, vol. 55, núm. 2, p. 358-366. |
dc.identifier.issn | 0026-2714 |
dc.identifier.uri | http://hdl.handle.net/2117/27086 |
dc.description.abstract | Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfections that results in carbon nanotube variations, which can have a severe impact on the devices' performance and jeopardize their reliability (in this work the term reliability means time-zero failure due to manufacturing variations). This paper presents a study of the effects on transistors of the main CNFET manufacturing imperfections, including the presence of metallic carbon nanotubes (m-CNTs), imperfect m-CNT removal processes, chirality drift, CNT doping variations in the source/drain extension regions, and density fluctuations due to non-uniform inter-CNT spacing. |
dc.format.extent | 9 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Nanotubes -- Reliability |
dc.subject.other | Carbon nanotube field-effect transistors (CNFETs) |
dc.subject.other | Carbon nanotubes (CNTs) |
dc.subject.other | CNFET manufacturing imperfections |
dc.subject.other | CNFET variability and reliability |
dc.title | Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections |
dc.type | Article |
dc.subject.lemac | Nanotubs -- Fiabilitat |
dc.contributor.group | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
dc.identifier.doi | 10.1016/j.microrel.2014.11.011 |
dc.description.peerreviewed | Peer Reviewed |
dc.rights.access | Open Access |
local.identifier.drac | 15465686 |
dc.description.version | Postprint (author’s final draft) |
local.citation.author | Almudever, C.G.; Rubio, A. |
local.citation.publicationName | Microelectronics reliability |
local.citation.volume | 55 |
local.citation.number | 2 |
local.citation.startingPage | 358 |
local.citation.endingPage | 366 |
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