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dc.contributor.authorAmat Bertran, Esteve
dc.contributor.authorCalomarde Palomino, Antonio
dc.contributor.authorAlmudever, Carmen G.
dc.contributor.authorAymerich Capdevila, Nivard
dc.contributor.authorCanal Corretger, Ramon
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria de Sistemes, Automàtica i Informàtica Industrial
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2015-03-03T16:49:41Z
dc.date.available2015-03-03T16:49:41Z
dc.date.created2013
dc.date.issued2013
dc.identifier.citationAmat, Esteve [et al.]. FinFET and III-V/Ge technology impact on 3T1D cell behavior. A: Intel Ireland Research Conference. "Intel Ireland Research Conference". 2013.
dc.identifier.urihttp://hdl.handle.net/2117/26567
dc.description.abstractIn this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios (variability and soft errors). FinFET-based circuits show the highest robustness against variability and soft error environments.
dc.language.isoeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshElectronic circuits
dc.titleFinFET and III-V/Ge technology impact on 3T1D cell behavior
dc.typeConference lecture
dc.subject.lemacCircuits electrònics
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.groupUniversitat Politècnica de Catalunya. ARCO - Microarquitectura i Compiladors
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
local.identifier.drac15375136
dc.description.versionPostprint (published version)
local.citation.authorAmat, Esteve; Calomarde, A.; Almudever, C.G.; Aymerich, N.; Canal, R.; Rubio, A.
local.citation.contributorIntel Ireland Research Conference
local.citation.publicationNameIntel Ireland Research Conference


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