A dual-band outphasing transmitter using broadband class E power amplifiers
Visualitza/Obre
06815087.pdf (1018.Kb) (Accés restringit)
Tipus de documentText en actes de congrés
Data publicació2014
Condicions d'accésAccés restringit per política de l'editorial
Abstract
In this paper, a dual-band outphasing
transmitter (able of operating either at 770 MHz or 960 MHz
frequency bands) is presented. Two broadband RF power
amplifiers (PAs) have been designed over packaged GaN HEMT
devices, switching close to the nominal zero-voltage and zerovoltage-derivative
class E conditions. A reactive combiner, using
transmission lines of appropriate electrical lengths at both bands,
together with compensating reactances, allows positioning the
drain impedance loci to produce high efficiency and good
dynamic range profiles. Average drain efficiency figures over
68% and 38% have been measured for WCDMA signals with a
peak-to-average power ratio (PAPR) of 5.1 dB and 8.4 dB,
respectively.
CitacióRuiz, M. N. [et al.]. A dual-band outphasing transmitter using broadband class E power amplifiers. A: International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. "Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on". Leuven: 2014, p. 1-4.
Fitxers | Descripció | Mida | Format | Visualitza |
---|---|---|---|---|
06815087.pdf![]() | 1018.Kb | Accés restringit |