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dc.contributor.authorChatterji, N
dc.contributor.authorKhatavkar, Sanchit
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorMorales Vilches, Ana Belén
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorMohan Arora, Brij
dc.contributor.authorAntony, Aldrin
dc.contributor.authorNaip, Praadep R
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2015-01-29T11:01:36Z
dc.date.created2014
dc.date.issued2014
dc.identifier.citationChatterji, N. [et al.]. A critical analysis on the role of back surface passivation for a-Si/c-Si heterojunction solar cells. A: IEEE Photovoltaic Specialists Conference. "2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)". Denver, Colorado: Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 2456-2458.
dc.identifier.isbn978-147994398-2
dc.identifier.urihttp://hdl.handle.net/2117/26149
dc.description.abstractBack surface passivation is a well-known method to reduce carrier recombination and hence improves the efficiency of crystalline silicon solar cells. In this manuscript, we critically analyze the role of this process for a-Si/c-Si heterojunction solar cells through a combination of device fabrication, multiple characterization techniques, and modeling. Curiously, our experimental results indicate that dark current characteristics of these devices do not scale in accordance with the improvements in carrier lifetime achieved through back surface passivation. Our results indicate these puzzling experimental results could be due to the possibility that carrier injection from crystalline silicon base significantly contributes to the dark current of these devices. This result has obvious and significant implications towards understanding the device physics and efficiency optimization of a-Si/c-Si heterojunction devices.
dc.format.extent3 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica::Dispositius fotoelèctrics
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject.lcshSolar cells
dc.subject.otheramorphous Si
dc.subject.othercarrier lifetime
dc.subject.otherheterojunction solar cell
dc.subject.otherphotovoltaic cells
dc.subject.othersilicon
dc.titleA critical analysis on the role of back surface passivation for a-Si/c-Si heterojunction solar cells
dc.typeConference lecture
dc.subject.lemacCèl·lules solars
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1109/PVSC.2014.6925426
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac15402674
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorChatterji, N.; Khatavkar, S.; Voz, C.; Morales, A.; Puigdollers, J.; Mohan, B.; Antony, A.; Naip, P.
local.citation.contributorIEEE Photovoltaic Specialists Conference
local.citation.pubplaceDenver, Colorado
local.citation.publicationName2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
local.citation.startingPage2456
local.citation.endingPage2458


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