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dc.contributor.authorColina Brito, Mónica Alejandra
dc.contributor.authorMorales Vilches, Ana Belén
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorMartín García, Isidro
dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorLópez Rodríguez, Gema
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2015-01-13T09:48:02Z
dc.date.available2017-05-02T00:30:36Z
dc.date.created2014-10-05
dc.date.issued2015-05-01
dc.identifier.citationColina, M.A. [et al.]. Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells. "Applied surface science", 01 Maig 2015.
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/2117/25234
dc.description.abstractIn this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only transfers the doping material but also produces a local heating that promotes its diffusion into the substrate. The laser employed was a 1064 nm, lamp-pumped system, working at pulse durations of 100 and 400 ns. In order to obtain a good electrical performance a comprehensive optimization of the applied laser fluency and number of pulses was carried out. Subsequently, arrays of n + p local junctions were created by LIFT and the resulting J – V curves demonstrated the formation of good quality n+ regions. These structures were finally incorporated to enhance the front contact in conventional silicon heterojunction solar cells leading to an improvement of conversion efficiency
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria dels materials::Materials funcionals::Materials elèctrics i electrònics
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Processament del senyal
dc.subject.lcshSolar cells
dc.subject.lcshMaterials -- Electric properties
dc.subject.lcshLasers -- Industrial applications
dc.subject.otherLIFT
dc.subject.otherSilicon heterojunction
dc.subject.othersolarcell
dc.subject.otherLaser direct-write
dc.titleLaser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells
dc.typeArticle
dc.subject.lemacCèl·lules solars
dc.subject.lemacMaterials -- Propietats elèctriques
dc.subject.lemacLàsers -- Aplicacions industrials
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.apsusc.2014.09.172
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0169433214021722
dc.rights.accessOpen Access
drac.iddocument15360027
dc.description.versionPostprint (author's final draft)
upcommons.citation.authorColina, M.A.; Morales, A.; Voz, C.; Martin, I.; Ortega, P.; Lopez, G.; Alcubilla, R.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameApplied surface science


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