Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells
Visualitza/Obre
10.1016/j.apsusc.2014.09.172
Inclou dades d'ús des de 2022
Cita com:
hdl:2117/25234
Tipus de documentArticle
Data publicació2015-05-01
Condicions d'accésAccés obert
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Abstract
In
this
work
the
Laser
Induced
Forward
Transfer
(LIFT)
technique
is
investigated
to
create
n-doped
regions
on
p-type
c-Si
substrates.
The
precursor
source
of
LIFT
consisted
in
a
phosphorous-doped
hydrogenated
amorphous
silicon
layer
grown
by
Plasma
Enhanced
Chemical
Vapor
Deposition
(PECVD)
onto
a
transparent
substrate.
Transfer
of
the
doping
atoms
occurs
when
a
sequence
of
laser
pulses
impinging
onto
the
doped
layer
propels
the
material
toward
the
substrate.
The
laser
irradiation
not
only
transfers
the
doping
material
but
also
produces
a
local
heating
that
promotes
its
diffusion
into
the
substrate.
The
laser
employed
was
a
1064
nm,
lamp-pumped
system,
working
at
pulse
durations
of
100
and
400
ns.
In
order
to
obtain
a
good
electrical
performance
a
comprehensive
optimization
of
the
applied
laser
fluency
and
number
of
pulses
was
carried
out.
Subsequently,
arrays
of
n
+
p
local
junctions
were
created
by
LIFT
and
the
resulting
J
–
V
curves
demonstrated
the
formation
of
good
quality
n+
regions.
These
structures
were
finally
incorporated
to
enhance
the
front
contact
in
conventional
silicon
heterojunction
solar
cells
leading
to
an
improvement
of
conversion
efficiency
CitacióColina, M.A. [et al.]. Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells. "Applied surface science", 01 Maig 2015.
ISSN0169-4332
Versió de l'editorhttp://www.sciencedirect.com/science/article/pii/S0169433214021722
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