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dc.contributor.authorLópez Rodríguez, Gema
dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorColina Brito, Mónica Alejandra
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorMorales Vilches, Ana Belén
dc.contributor.authorOrpella García, Alberto
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2015-01-13T09:09:15Z
dc.date.available2017-05-02T00:30:41Z
dc.date.created2015-05-01
dc.date.issued2015-05-01
dc.identifier.citationLopez, G. [et al.]. Emitter formation using laser doping technique on n- and p-type c-Si substrates. "Applied surface science", 04 Novembre 2014.
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/2117/25232
dc.description.abstractIn this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiC x /a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al 2 O 3 ) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J–V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subjectÀrees temàtiques de la UPC::Enginyeria dels materials::Materials funcionals::Materials elèctrics i electrònics
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica::Làser
dc.subject.lcshSolar cells
dc.subject.lcshMaterials -- Electric properties
dc.subject.lcshLasers -- Industrial applications
dc.titleEmitter formation using laser doping technique on n- and p-type c-Si substrates
dc.typeArticle
dc.subject.lemacCèl·lules solars
dc.subject.lemacMaterials -- Propietats elèctriques
dc.subject.lemacLàsers -- Aplicacions industrials
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.apsusc.2014.10.140
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
drac.iddocument15360062
dc.description.versionPostprint (author's final draft)
upcommons.citation.authorLopez, G.; Ortega, P.; Colina, M.A.; Voz, C.; Morales, A.; Orpella, A.; Alcubilla, R.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameApplied surface science


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