Emitter formation using laser doping technique on n- and p-type c-Si substrates
Visualitza/Obre
10.1016/j.apsusc.2014.10.140
Inclou dades d'ús des de 2022
Cita com:
hdl:2117/25232
Tipus de documentArticle
Data publicació2015-05-01
Condicions d'accésAccés obert
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Abstract
In
this
work
laser
doping
technique
is
used
to
create
highly-doped
regions
defined
in
a
point-like
structure
to
form
n+/p
and
p+/n
junctions
applying
a
pulsed
Nd-YAG
1064
nm
laser
in
the
nanosecond
regime.
In
particular,
phosphorous-doped
silicon
carbide
stacks
(a-SiC
x
/a-Si:H
(n-type))
deposited
by
Plasma
Enhanced
Chemical
Vapor
Deposition
(PECVD)
and
aluminum
oxide
(Al
2
O
3
)
layers
deposited
by
atomic
layer
deposition
(ALD)
on
2
±
0.5
cm
p-
and
n-type
FZ
c-Si
substrates
respectively
are
used
as
dopant
sources.
Laser
power
and
number
of
pulses
per
spot
are
explored
to
obtain
the
optimal
electrical
behavior
of
the
formed
junctions.
To
assess
the
quality
of
the
p+
and
n+
regions,
the
junctions
are
electrically
contacted
and
characterized
by
means
of
dark
J–V
measurements.
Additionally,
a
diluted
HF
treatment
previous
to
front
metallization
has
been
explored
in
order
to
know
its
impact
on
the
junction
quality.
The
results
show
that
fine
tuning
of
the
energy
pulse
is
critical
while
the
number
of
pulses
has
minor
effect.
In
general
the
different
HF
treatments
have
no
impact
in
the
diode
electrical
behavior
except
for
an
increase
of
the
leakage
current
in
n+/p
junctions.
The
high
electrical
quality
of
the
junctions
makes
laser
doping,
using
dielectric
layers
as
dopant
source,
suitable
for
solar
cell
applications.
Particularly,
a
potential
open
circuit
voltage
of
0.64
V
(1
sun)
is
expected
for
a
finished
solar
cell.
CitacióLopez, G. [et al.]. Emitter formation using laser doping technique on n- and p-type c-Si substrates. "Applied surface science", 04 Novembre 2014.
ISSN0169-4332
Fitxers | Descripció | Mida | Format | Visualitza |
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emitterFormation.pdf | 1,553Mb | Visualitza/Obre |