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dc.contributor.authorFerrerón, Alexandra
dc.contributor.authorSuárez Gracia, Darío
dc.contributor.authorAlastruey, Jesús
dc.contributor.authorMonreal Arnal, Teresa
dc.contributor.authorViñals Yufera, Víctor
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors
dc.date.accessioned2014-12-19T09:01:59Z
dc.date.available2014-12-19T09:01:59Z
dc.date.created2014
dc.date.issued2014
dc.identifier.citationFerrerón, A. [et al.]. Block disabling characterization and improvements in CMPs operating at ultra-low voltages. A: International Symposium on Computer Architecture and High Performance Computing. "IEEE 26th International Symposium on Computer Architecture and High Performance Computing: 22–24 October 2014: Paris, France: proceedings". París: Institute of Electrical and Electronics Engineers (IEEE), 2014, p. 238-245.
dc.identifier.isbn978-1-4799-6904-3
dc.identifier.urihttp://hdl.handle.net/2117/25094
dc.description.abstractPower density has become the limiting factor in technology scaling as power budget restricts the amount of hardware that can be active at the same time. Reducing supply voltage to ultra-low voltage ranges close to the threshold region has the promise of great energy savings. However, the potential savings of voltage scaling are limited by the correct operation of SRAM cells, which is not guaranteed below Vddmin, the minimum voltage in which cache structures operate reliably. Understanding the effects of operating below Vddmin requires complex modelling, so we introduce an updated probability failure model of SRAM cells at 22nm and explore the reliability impact of lowering the chip voltage supply below Vddmin in shared memory coherent chip-multiprocessors (CMP) running a variety of parallel workloads. A micro architectural technique to cope with cache reliability at ultra-low voltages is block disabling, however, in many cases, the savings in on-chip caches do not compensate for the consumption in the rest of the system, as the consumption increase of the off-chip memory may offset the on-chip gain. We make the case that existing coherence mechanisms can provide the substrate to improve energy savings with block disabling and propose two low-complexity techniques. Taking the best of both techniques we can scale voltage below Vddmin and reduce system energy up to 39%, and system energy-delay up to 10%. Besides, by lowering the CMP consumption in a power constrained scenario, we could activate offline cores, reaching a potential speedup between 3.7 and 4.4.
dc.format.extent8 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject.lcshMicroprocessors
dc.subject.lcshIntegrated circuits -- Reliability
dc.subject.otherCoherence
dc.subject.otherEnergy consumption
dc.subject.otherProtocols
dc.subject.otherSRAM cells
dc.subject.otherThreshold voltage
dc.subject.otherVoltage control
dc.titleBlock disabling characterization and improvements in CMPs operating at ultra-low voltages
dc.typeConference report
dc.subject.lemacMicroprocessadors
dc.subject.lemacCircuits integrats -- Fiabilitat
dc.contributor.groupUniversitat Politècnica de Catalunya. CAP - Grup de Computació d'Altes Prestacions
dc.identifier.doi10.1109/SBAC-PAD.2014.12
dc.relation.publisherversionhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=6970670&punumber%3D6967884%26sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6970630%29%26pageNumber%3D2
dc.rights.accessOpen Access
local.identifier.drac15177718
dc.description.versionPostprint (author’s final draft)
local.citation.authorFerrerón, A.; Suárez, D.; Alastruey, J.; Monreal, T.; Victor, V.
local.citation.contributorInternational Symposium on Computer Architecture and High Performance Computing
local.citation.pubplaceParís
local.citation.publicationNameIEEE 26th International Symposium on Computer Architecture and High Performance Computing: 22–24 October 2014: Paris, France: proceedings
local.citation.startingPage238
local.citation.endingPage245


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